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15. Crystal Engineering » 15.6 IV-group-based compounds

[19a-PB5-1~17] 15.6 IV-group-based compounds

Fri. Sep 19, 2014 9:30 AM - 11:30 AM PB5 (Gymnasium2)

ポスター掲示時間9:30～11:30(PB5会場)

9:30 AM - 11:30 AM

[19a-PB5-8] Electrical Characteristics of TEOS-SiO₂ Films Deposited on SiC

^○kanta maeda¹, ryu hasunuma¹, kikuo yamabe¹ (Tsukuba Univ.¹)

Keywords:SiC,TEOS