The 75th JSAP Autumn Meeting, 2014

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Poster presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

[19a-PB5-1~17] 15.6 IV-group-based compounds

Fri. Sep 19, 2014 9:30 AM - 11:30 AM PB5 (Gymnasium2)

ポスター掲示時間9:30～11:30(PB5会場)

9:30 AM - 11:30 AM

[19a-PB5-7] Improvement of Deposited SiO2 films on 4H-SiC by Thermal-Plasma-Jet Annealing

○Ryosuke Ishimaru1, Hiroaki Hanafusa1, Keisuke Maruyama1, Yukitaka Hiromatsu1, Shohei Hayashi1, Seiichiro Higashi1 (Graduate School of Advanced Sciences of Matter, Hiroshima Univ.1)

Keywords:SiC,MOS