[18a-A17-1~13] 15.6 IV-group-based compounds

[18a-A17-6] Partial Dislocation Motion in 4H-SiC Associated with Stacking Fault Expansion and Contraction

^○Yoshifumi Yamashita¹, Takuya Shimomura¹, Takeshi Nishikawa¹, Yasuhiko Hayashi¹ (Okayama Univ.¹)

Keywords:4H-SiC,積層欠陥,部分転位運動