Variation of oxide growth rate by introducing Ar annealing to oxidation of SiC

Presentation information

Poster presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

Fri. Sep 19, 2014 9:30 AM - 11:30 AM PB5 (Gymnasium2)

ポスター掲示時間9:30～11:30(PB5会場)

9:30 AM - 11:30 AM

^○Ryotaro Konno¹, Shuhei Yagi¹, Yasuto Hijikata¹, Hiroyuki Yaguchi¹ (Saitama Univ.¹)

Keywords:SiC