Ge/Si Hetero-Junction TFETs with In-situ Boron-Doped Ge-Source

Presentation information

Poster presentation

13. Semiconductors A (Silicon) » 13.4 Devices/Integration Technologies

Wed. Sep 17, 2014 9:30 AM - 11:30 AM PA3 (Gymnasium1)

ポスター掲示時間9:30～11:30(PA3会場)

9:30 AM - 11:30 AM

^○Minsoo Kim^1,2, Yuki Wakabayashi¹, Ryosho Nakane¹, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (The University of Tokyo¹, JST-CREST²)

Keywords:Tunnel FET,Ge-source,hetero-junction