[17a-PA3-1~7] 13.4 Devices/Integration Technologies

[17a-PA3-4] Demonstration of front-gate GaSb-OI p-MOSFETs on Si wafers fabricated by direct wafer bonding

^○Koichi Nishi^1,2, Masafumi Yokoyama¹, Haruki Yokoyama^2,3, Takuya Hoshi^2,3, Hiroki Sugiyama^2,3, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (Univ. of Tokyo¹, JST CREST², NTT Photonics Labs.³)

Keywords:GaSb