Oxide Thickness Dependence of Resistive Switching Characteristics for HfOx based ReRAM Device

Presentation information

Oral presentation

13. Semiconductors A (Silicon) » 13.4 Devices/Integration Technologies

Wed. Sep 17, 2014 2:00 PM - 5:45 PM A16 (E307)

5:00 PM - 5:15 PM

^○Daisuke Ito¹, shintaro Otsuka¹, Yoshifumi Hamada¹, Tomohiro Shimizu¹, Syousou Shingubara¹ (Kansai Univ.¹)

Keywords:抵抗変化メモリ