Conductive Filament in the Early Switching Stage of Cu/MoOx/TiN ReRAM

Presentation information

Oral presentation

13. Semiconductors A (Silicon) » 13.4 Devices/Integration Technologies

Wed. Sep 17, 2014 2:00 PM - 5:45 PM A16 (E307)

5:30 PM - 5:45 PM

^○Masashi Arita¹, Yuuki Ohno¹, Masaki Kudo¹, Yasuo Takahashi¹ (Hokkaido Univ.¹)

Keywords:抵抗変化メモリ,導電フィラメント,その場TEM観察