Nitrogen Doping in 4H-SiC by Laser Irradiation in Nitrogen Plasma at Atmospheric Pressure

Presentation information

Oral presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

Wed. Sep 17, 2014 2:00 PM - 6:00 PM A17 (E308)

5:00 PM - 5:15 PM

^○Ryota Kojima¹, Hiroshi Ikenoue¹, Yosuke Watanabe¹, Akihiro Ikeda¹, Daisuke Nakamura¹, Tanemasa Asano¹, Tatsuo Okada¹ (Kyushu Univ.¹)

Keywords:SiC,laser