Oral presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

[17p-A17-1~14] 15.6 IV-group-based compounds

Wed. Sep 17, 2014 2:00 PM - 6:00 PM A17 (E308)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:30～14:00 (12:30 PM - 2:00 PM)

2:00 PM - 2:15 PM

[17p-A17-1] [Young Scientist Oral Presentation Award Speech]（15min.）
Application of Non-relaxation Method for the Threshold Voltage Instability under Gate Stress to 4H-SiC (0001) MOSFET with N2O Oxidation

^○Mitsuru Sometani^1,2, Dai Okamoto¹, Shinsuke Harada¹, Hitoshi Ishimori¹, Shinji Takasu¹, Tetsuo Hatakeyama¹, Manabu Takei², Kazutoshi Kojima¹, Yoshiyuki Yonezawa¹, Kenji Fukuda¹ (AIST ADPERC¹, Fuji Electric²)

2:15 PM - 2:30 PM

[17p-A17-2] Proposal of Method for Quantitative Characterization of Slow Traps in SiC MOS Capacitors from Transient Capacitance Measurements

^○Yuki Fujino¹, Richard Heihachiro Kikuchi¹, Hirohisa Hirai¹, Koji Kita^1,2 (The Univ. of Tokyo¹, JST-PRESTO²)

2:30 PM - 2:45 PM

[17p-A17-3] Transient response characteristic of SiC-MOSFETs

^○Junji Senzaki^1,2, Hironori Yoshioka^1,2, Atsushi Shimozato², Yusuke Kobayashi¹, Keiko Ariyoshi¹, Takahito Kojima¹, Shinsuke Harada^1,2, Yasunori Tanaka^1,2, Hajime Okumura^1,2 (FUPET¹, AIST²)

2:45 PM - 3:00 PM

[17p-A17-4] Effect of surface defects in 4H-SiC epitaxial films on the gate oxide reliability

^○Osamu Ishiyama^1,3, Keiichi Yamada^1,4, Junji Senzaki^1,2, makoto Kitabatake^1,3 (FUPET¹, AIST², Panasonic Corp.³, Toray Research Center Inc.⁴)

3:00 PM - 3:15 PM

[17p-A17-5] Reliability improvement in Gate Silicon Dioxide even on Silicon Carbide

^○Masashi Minami¹ (PHNITEC SEMICONDUCTOR¹)

Break 15:15～15:30 (3:15 PM - 3:30 PM)

3:30 PM - 3:45 PM

△ [17p-A17-6] Evaluation method of the gate dielectric reliability under negative gate bias with the ultraviolet irradiation for supplying hole to SiC MOS capacitors

^○Teruyuki Ohashi¹, Ryosuke Iijima¹, Kazuto Takao¹ (Corporate R&D Center, Toshiba Corp.¹)

3:45 PM - 4:00 PM

△ [17p-A17-7] Critical Electric Field in Ion Irradiated 4H-SiC MOSFETs

^○Manato Deki^1,2, Takahiro Makino², Takuro Tomita¹, Kazutoshi Kojima³, Takeshi Ohshima² (The Univ. of Tokushima¹, JAEA², AIST³)

4:00 PM - 4:15 PM

[17p-A17-8] Interface properties of 4H-SiC MOS fabricated on the C-face in NF3-added O2 ambient

^○Kohei Hanasato¹, Takashi Hasunuma¹, Kikuo Ymabe¹ (Univ. of Tsukuba¹)

4:15 PM - 4:30 PM

[17p-A17-9] Wet oxidation of Si thin film on SiC substrates and stability of interfacial structure

^○(PC)Jianbo Liang¹, Tomohiro Hayashi¹, Syouta Nisida¹, Masasi Morimoto¹, Naoteru Shigekawa¹, Mnabu Arai² (Osaka City University¹, New Japan Radio Co., Ltd²)

4:30 PM - 4:45 PM

[17p-A17-10] Gate Stack Fabrication on n-type 3C-SiC at Low Temperature

^○Yusuke Yamamoto¹, Ryosuke Murayama¹, Keisuke Yamamoto², Dong Wang¹, Hiroshi Nakashima², Shigeomi Hishiki³, Keisuke Kawamura³ (I-Eggs Kyushu Univ¹, KASTEC Kyushu Univ², Air Water R & D Co., Ltd³)

Break 16:45～17:00 (4:45 PM - 5:00 PM)

5:00 PM - 5:15 PM

△ [17p-A17-11] Nitrogen Doping in 4H-SiC by Laser Irradiation in Nitrogen Plasma at Atmospheric Pressure

^○Ryota Kojima¹, Hiroshi Ikenoue¹, Yosuke Watanabe¹, Akihiro Ikeda¹, Daisuke Nakamura¹, Tanemasa Asano¹, Tatsuo Okada¹ (Kyushu Univ.¹)

5:15 PM - 5:30 PM

[17p-A17-12] Nitrogen Doping of 4H-SiC by KrF Excimer Laser Irradiation in Liquid Nitrogen

^○Daichi Marui¹, Akihiro Ikeda¹, Hiroshi Ikenoue¹, Tanemasa Asano¹ (Kyushu Univ.¹)

5:30 PM - 5:45 PM

[17p-A17-13] Schottky diode characteristics of TiC and TiSi2 electrodes on SiC substrates

^○Tomoyuki Suzuki¹, Mari Okamoto², Osamu Munekiyo², Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, IGSSE²)

5:45 PM - 6:00 PM

[17p-A17-14] Evaluation of the Deep Level in 4H-SiC Schottky Barrier Diode by Alpha Particle Induced Charge Transient Spectroscopy

^○(M1)Yuya Kambayashi^1,2, Shinobu Onoda², Naoya Iwamoto², Wataru Kada¹, Takahiro Makino², Norihiro Hoshino³, Hidekazu Tsuchida³, Takeshi Ohshima², Tomihiro Kamiya², Osamu Hanaizumi¹ (Gunma Univ.¹, JAEA², CRIEPI³)