[17p-A17-1~14] 15.6 IV-group-based compounds

[17p-A17-14] Evaluation of the Deep Level in 4H-SiC Schottky Barrier Diode by Alpha Particle Induced Charge Transient Spectroscopy

^○(M1)Yuya Kambayashi^1,2, Shinobu Onoda², Naoya Iwamoto², Wataru Kada¹, Takahiro Makino², Norihiro Hoshino³, Hidekazu Tsuchida³, Takeshi Ohshima², Tomihiro Kamiya², Osamu Hanaizumi¹ (Gunma Univ.¹, JAEA², CRIEPI³)

Keywords:SiC,欠陥準位,アルファ粒子