Proposal of Method for Quantitative Characterization of Slow Traps in SiC MOS Capacitors from Transient Capacitance Measurements

Presentation information

Oral presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

Wed. Sep 17, 2014 2:00 PM - 6:00 PM A17 (E308)

2:15 PM - 2:30 PM

^○Yuki Fujino¹, Richard Heihachiro Kikuchi¹, Hirohisa Hirai¹, Koji Kita^1,2 (The Univ. of Tokyo¹, JST-PRESTO²)

Keywords:SiC,MOS,欠陥準位