[17p-A19-1~12] Low-Temperature Growth of Group-IV Semiconductors on Insulator -Emerging New Crystallization Techniques -

[17p-A19-9] Ultra-low temperature (≤ 250^oC) formation of orientation-controlled SiGe mixed crystals by gold-induced crystallization for advanced flexible electronics

^○Jong-Hyeok Park^1,2, Masanobu Miyao¹, Taizoh Sadoh¹ (Kyushu Univ.¹, JSPS Research Fellow²)

Keywords:SiGe