Relationship between epitaxial layer structure and buffer leakage current in AlGaN/GaN HEMT on Si substrate

Presentation information

Oral presentation

Code-sharing session » 14.3/15.4 Code-sharing session

Wed. Sep 17, 2014 2:00 PM - 5:45 PM A27 (N302)

4:15 PM - 4:30 PM

^○Noriyuki Watanabe¹, Shinichi Tanabe¹, Narihiko Maeda¹, Hideaki Matsuzaki¹ (NTT Photonics Labs.¹)

Keywords:Si基板上AlGaN/GaN HEMT,バッファリーク電流