Oral presentation

Code-sharing session » 14.3/15.4 Code-sharing session

[17p-A27-1~14] 14.3/15.4 Code-sharing session

Wed. Sep 17, 2014 2:00 PM - 5:45 PM A27 (N302)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:00～14:00 (12:00 PM - 2:00 PM)

2:00 PM - 2:15 PM

[17p-A27-1] Dispersion of trap concentrations in MOCVD n-GaN on GaN substrate

^○Kazuki Miyamoto¹, Yutaka Tokuda¹ (Aichi Inst. of Technol.¹)

2:15 PM - 2:30 PM

▲ [17p-A27-2] Influence of intentional impurities (O, C) on the epitaxial GaN layers properties

^〇(P)Yaxin Wang¹, Takashi Teramoto², Kazuhiro Ohkawa¹ (TUS¹, AL²)

2:30 PM - 2:45 PM

[17p-A27-3] Temperature dependence of Hall mobility in AlGaN/GaN heterostructure with modulation doped GaN capped layer

^○Akihiro Ando¹, Yamato Osada², Ryuichiro Kamimura², Akio Wakejima¹, Takashi Egawa¹ (Nagoya Inst¹, ULVAC²)

2:45 PM - 3:00 PM

[17p-A27-4] Analysis of interface traps in AlGaN/GaN heterojunction by conductance method

^○Toshiyuki Baba¹, Takamasa Kawanago², Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenzi Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE²)

3:00 PM - 3:15 PM

[17p-A27-5] Extraction of Band Alignment of Metal/AlGaN/GaN Structures with HXPES

^○Kazuki Ohga¹, Jiangning Chen¹, Taka masa Kawanago², Kuniyuki Kakushima², Hiroshi Nohira³, Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE², Tokyo City Univ³)

3:15 PM - 3:30 PM

[17p-A27-6] MOCVD growth and characterization of nearly-lattice-matched InAlN/AlGaN 2DEG heterostructures

^○Shu Fujita¹, Makoto Miyoshi¹, Takashi Egawa¹ (Nagoya Inst. of Tech.¹)

3:30 PM - 3:45 PM

[17p-A27-7] Electrical properties of Si doped AlInN/GaN heterostructures grown by MOVPE

^○Kazuki Ikeyama¹, Toshiki Yasuda¹, Yugo Kozuka¹, Kosuke Horikawa¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (Fac. Sci.&Tech.Meijo Univ.¹, ARC, Nagoya Univ.²)

Break 15:45～16:00 (3:45 PM - 4:00 PM)

4:00 PM - 4:15 PM

▲ [17p-A27-8] RTA of MOVPE-grown Mg-doped In_xGa_1-xN (x~0.3) for Mg activation

^〇Mdtanvir Hasan^1,2, A. Mihara^1,2, N. Shigekawa³, A. Yamamoto^1,2, M. Kuzuhara¹ (Univ. of Fukui¹, JST-CREST², Osaka City Univ.³)

4:15 PM - 4:30 PM

[17p-A27-9] Relationship between epitaxial layer structure and buffer leakage current in AlGaN/GaN HEMT on Si substrate

^○Noriyuki Watanabe¹, Shinichi Tanabe¹, Narihiko Maeda¹, Hideaki Matsuzaki¹ (NTT Photonics Labs.¹)

4:30 PM - 4:45 PM

[17p-A27-10] Control of leakage current on AlGaN/GaN-based p-channel HFETs

^○Rei Kayanuma¹, Shunsuke Kubota¹, Akira Nakajima³, Shin-ichi Nishizawa³, Hiromichi Ohashi^2,3, Kazuo Tsutsui¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai² (Tokyo Tech. IGSSE¹, Tokyo Tech. FRC², AIST³)

4:45 PM - 5:00 PM

△ [17p-A27-11] Study on carrier dynamics of high-insulation GaN at elevated temperatures by noncontacting ultrasound resonance method

^○(M2)Yuki Tsutsui¹, Hirotsugu Ogi¹, Nobutomo Nakamura¹, Yusuke Mori², Mamoru Imade², Masashi Yoshimura², Masahiko Hirao¹ (Osaka Univ. Grad. Sch. of Engineering Science¹, Osaka Univ. Grad. Sch. of Engineering²)

5:00 PM - 5:15 PM

[17p-A27-12] Electric characterization of GaN film on sapphire using THz ellipsometry

^○Takashi Fujii^1,4, Toshiyuki Iwamoto¹, Yukonori Sato¹, Satoshi Kamiyama², Takeshi Nagashima³, Tsutomu Araki⁴ (PNP¹, Meijo Univ.², Setsunan Univ.³, Ritsumeikan Univ.⁴)

5:15 PM - 5:30 PM

[17p-A27-13] Improvement of the device performance in AlGaN/GaN HFET UV photosensors by Mg-doped AlGaN

^○Yuma Yamamoto¹, Takuya Murase¹, Toshiki Kusafuka¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (Fac.Sci. & Technol., Meijo Univ.¹, Akasaki Inst., Nagoya Univ.²)

5:30 PM - 5:45 PM

[17p-A27-14] Radiation Hard AlGaN/GaN Heterostructure- Micro-Hall Sensors

Abdelkader Abderrahmane¹, ^○Tsukasa Takamura², Shinichiro Sato³, Takeshi Ohshima³, Hiroshi Okada^1,2, Adarsh Sandhu^1,2 (Toyohashi Univ. Tech.¹, Toyohashi Univ. Tech. EIIRIS², Japan Atomic Energy Agency³)