[17p-B1-1~3] 17.4 Device application

[17p-B1-1] Fabrication of top-gated MoS₂ FET with Al₂O₃ insulator

^○Naruki Ninomiya^1,2, Takahiro Mori², Noriyuki Uchida², Eiichiro Watanabe³, Daiju Tsuya³, Satoshi Moriyama³, Masatoshi Tanaka¹, Atsushi Ando² (Yokohama National Univ.¹, AIST², NIMS³)

Keywords:MoS2,トランジスタ,high-k