The 75th JSAP Autumn Meeting, 2014

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Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[17p-C5-1~18] 15.4 III-V-group nitride crystals

Wed. Sep 17, 2014 1:15 PM - 6:45 PM C5 (Open Hall)

5:30 PM - 5:45 PM

△ [17p-C5-14] Epitaxial growth of GaN thin films by reactive sputtering

○Yuji Isosaki1, Yuichiro Yamashita2, Takashi Yagi2, Junjun Jia1, Naoyuki Taketoshi2, Shinichi Nakamura1, Yuzo Shigesato1 (Aoyama Gakuin University1, National Institute of Advanced Industrial Science and Technology2)

Keywords:GaN,反応性スパッタ,熱物性