Oral presentation

[17a-C5-1~10] 15.4 III-V-group nitride crystals

Wed. Sep 17, 2014 9:00 AM - 11:45 AM C5 (Open Hall)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[17a-C5-1] Growth of hexagonal boron nitride films by low-pressure CVD

^○Naoki Umehara¹, Atsushi Masuda¹, Takaki Shimizu², Tetsuya Kouno¹, Hiroko Kominami¹, Kazuhiko Hara^3,4 (Shizuoka Univ.¹, Shizuoka Univ.², Shizuoka Univ.³, Shizuoka Univ.⁴)

9:15 AM - 9:30 AM

[17a-C5-2] Evaluation of the influence of substrate in BGaN epitaxial growth

^○(M1)Kohei Ueyama¹, Katsuhiro Atsumi¹, Hidenori Mimura², Yoku Inoue¹, Toru Aoki², Takayuki Nakano¹ (Shizuoka Univ.¹, Res. Inst. Electronics, Shizuoka Univ.²)

9:30 AM - 9:45 AM

[17a-C5-3] Structural and mechanical characterization of BN films prepared by Reactive Plasma-Assisted Coating (RePAC)—Substrate bias voltage dependence—

^○Masao Noma¹, Michiru Yamashita², koji Eriguchi³, Shigehiko Hasegawa⁴ (SHINKO SEIKI. Co., LTD.¹, Hyogo Prefectural Institute of Technology², Kyoto University³, Osaka University⁴)

9:45 AM - 10:00 AM

[17a-C5-4] Electrical and Magnetic Properties of Fe Nitrides grown on GaN(0001)

Shota Yamauchi¹, Masaru Yoneoka¹, Hiroaki Yamaguchi¹, ^○Shigehiko Hasegawa¹ (Osaka Univ. ISIR-SANKEN¹)

10:00 AM - 10:15 AM

[17a-C5-5] Influence of mono-layer Graphene on growth process of GaN on mono-layer Graphene/SiO2-film/Si(001) substrate by ECR-MBE method (II)

^○Tokuo Yodo¹, Nan Yang¹, Tomoaki Ishikawa¹, Satoru Kaneko^3,2, Daishi Shiojiri², Akifumi Matsuda², Mamoru Yoshimoto² (Osaka Inst. of Tech.¹, Tokyo Inst. of Tech.², Kanagawa Ind. Tech. Center³)

Break 10:15～10:30 （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

[17a-C5-6] Effect of in situ N2 micro plasma treatment on initial growth of GaN by MOMBE

^○Yohei Suzuki¹, Yasuhiro Kusakabe¹, Takahiro Maruyama¹, Shigeya Narituka¹, Kazuo Shimizu², Shogo Kaneda² (Meijo Univ.¹, Shizuoka Univ.²)

10:45 AM - 11:00 AM

△ [17a-C5-7] Controllability of ultra-thin GaN layer growth in AlN/GaN multi-layered structure grown by PAMBE

^○Mitsuaki Kaneko¹, Tsunenobu Kimoto¹, Jun Suda¹ (Kyoto Univ.¹)

11:00 AM - 11:15 AM

△ [17a-C5-8] Thinning of Regularly Arranged GaN Nanocolumns ～Realization of Nanocolumns with a diameter as narrow as 34 nm～

^○Tatsuya Kano^1,2, Takao Oto^1,2, Yutaro Mizuno^1,2, Jun Yoshida^1,2, Rin Miyagawa^1,2, Katsumi Kishino^1,2 (Sophia Univ.¹, Sophia Univ. Nanotech. Res. Center²)

11:15 AM - 11:30 AM

[17a-C5-9] Crystalline quality control of nitride nanocolumns on sputter-deposited AlN layer by pre-growth tuning

^○Daishi Fukushima¹, Hiroaki Hayashi¹, Yuta Konno¹, Katsumi Kishino^1,2 (Sophia Univ.¹, Sophia Nanotechnology²)

11:30 AM - 11:45 AM

[17a-C5-10] Flip-chip bonding of single crystalline nanocolumn arrays on sputter-deposited AlN/Si (111) to another carrier

^○Hiroaki Hayashi¹, Daisuke Tomimatsu¹, Daishi Fukushima¹, Tomohiro Noma¹, Ichirou Nomura¹, Katsumi Kishino^1,2 (Sophia university¹, Sophia nanotechnology research center²)

Oral presentation

[17p-C5-1~18] 15.4 III-V-group nitride crystals

Wed. Sep 17, 2014 1:15 PM - 6:45 PM C5 (Open Hall)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 11:45～13:15 （11:45 AM - 1:15 PM）

1:15 PM - 1:45 PM

[17p-C5-1] [Award for Best Review Paper Speech](30min.)Wide-Bandgap Semiconductor Materials: For Their Full Bloom

^○Shizuo Fujita (Kyoto University)

1:45 PM - 2:00 PM

[17p-C5-2] Microscopic crystalline morphology of semipolar (20-21) GaN on (22-43) Patterned Sapphire Substrate

^○(M2)Takuji Arauchi¹, Shotaro Takeuchi¹, Yasuhiro Hashimoto², Yoshiaki Nakamura¹, Yasuhiko Imai³, Keisuke Yamane², Narihito Okada², Shigeru Kimura³, Kazuyuki Tadatomo², Akira Sakai¹ (Osaka Univ¹, Yamaguchi Univ², JASRI/SPring-8³)

2:00 PM - 2:15 PM

[17p-C5-3] Thickness and Growth condition Dependence of Crystallinity in Semipolar (20-21) GaN Films by X-ray Diffraction

^○(M1)Toshiro Uchiyama¹, Shotaro Takeuchi¹, Takuji Arauchi¹, Yasuhiro Hashimoto², Yoshiaki Nakamura¹, Keisuke Yamane², Narihito Okada², Kazuyuki Tadatomo², Akira Sakai¹ (Osaka Univ.¹, Yamaguchi Univ.²)

2:15 PM - 2:30 PM

[17p-C5-4] Synchrotron X-ray crystallinity evaluation of GaN single-crystal wafers grown by Na flux method

^○(M2)Shuhei Fukuda¹, Yoshiyuki Tsusaka¹, Hidekazu Takano¹, Yasushi Kagoshima¹, Soichi Nose², Shingo Takeda², Kazushi Yokoyama², Junji Matsui², Masayuki Imanishi³, Yuma Todoroki³, Mihoko Maruyama³, Mamoru Imade³, Masashi Yoshimura³, Yusuke Mori³ (Univ. of Hyogo¹, Hyogo Synchrotron Radiation Nanotechnology Lab.², Osaka Univ.³)

2:30 PM - 2:45 PM

[17p-C5-5] Impact of crystalline quarity of GaN template on GaN substrate by hydride vapor phase epitaxy

^○Takuya Egami¹, Takeshi Yamamoto¹, Takashi Inagaki¹, Norihiro Itagaki¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (Yamaguchi Univ.¹)

2:45 PM - 3:00 PM

[17p-C5-6] Comparison of crystalline qualities in semipolar {20-21} GaN and {20-2-1} GaN grown by hydride vapor phase epitaxy

^○Yasuhiro Hashimoto¹, Takashi Inagaki¹, Kota Nakao¹, Keisuke Yamane², Narihito Okada¹, Kazuyuki Tadatomo¹ (Yamaguchi Univ.¹, Toyohashi Univ. Tech.²)

Break 15:00～15:15 （3:00 PM - 3:15 PM）

3:15 PM - 3:30 PM

[17p-C5-7] Effect of temperature distribution on epitaxial GaN growth using Ga2O vapor

^○Hiroaki Takatsu¹, Yuki Taniyama¹, Masami Juta¹, Tomoaki Sumi¹, Akira Kitamoto¹, Mamoru Imade¹, Masashi Yoshimura¹, Masashi Isemura², Yusuke Mori¹ (Osaka University¹, Itochu Plastics Inc.²)

3:30 PM - 3:45 PM

[17p-C5-8] Effect of characteristics of seed surface on the GaN growth using Ga₂O vapor

^○Akira Kitamoto¹, Yuan Bu¹, Hiroaki Takatsu¹, Masami Juta¹, Tomoaki Sumi¹, Mamoru Imade¹, Masashi Yoshimura¹, Masashi Isemura², Yusuke Mori¹ (Osaka Univ.¹, Itochu Plastics Inc.²)

3:45 PM - 4:00 PM

[17p-C5-9] Deterioration of Homoepitaxial HVPE-AlN Suface in a High Temperature Gas Atmosphere

^○Shunsuke Tojo¹, Ryohei Tanaka¹, Toshinari Nukaga¹, Rie Togashi¹, Toru Nagashima², Toru Kinoshita², Baxter Moody³, Hisashi Murakami¹, Ramon Collazo⁴, Yoshinao Kumagai¹, Zlatko Sitar^3,4 (Tokyo University of Agriculture and Technology¹, Tokuyama Corporation², HexaTech, Inc.³, North Carolina State Univ.⁴)

4:00 PM - 4:15 PM

△ [17p-C5-10] Synthesis of single-crystalline AlN nanowires by nitridation of multi-component melt

^○(M2)Mingyu Chen¹, Masashi Nagaya¹, Shota Watanabe¹, Yukihisa Takeuchi¹, Shunta Harada¹, Shigeo Arai², Miho Tagawa¹, Toru Ujihara¹ (Nagoya Univ.¹, EcoTopia Institute²)

4:15 PM - 4:30 PM

△ [17p-C5-11] Determination of experimental condition using chemical equilibrium calculations in AlN solution growth

^○(M2)Masashi Nagaya¹, Mingyu Chen¹, Shota Watanabe¹, Yukihisa Takeuchi¹, Shunta Harada¹, Miho Tagawa¹, Toru Ujihara¹ (Nagoya Univ.¹)

Break 16:30～16:45 （4:30 PM - 4:45 PM）

4:45 PM - 5:15 PM

[17p-C5-12] [JSAP Paper Award Speech]（30min.）
Epitaxial Growth of III-Nitride/Graphene Heterostructures for Electronic Devices

^○Neeraj Nepal, Virginia D Wheeler, Travis J Anderson, Francis J Kub, Michael A Mastro, Rachael L Myers-Ward, Syed B Qadri, Jaime A Freitas, Sandra C Hernandez, Luke O Nyakiti, Scott G Walton, Kurt Gaskill, and Charles R Eddy, Jr. (U.S. Naval Research Laboratory)

5:15 PM - 5:30 PM

[17p-C5-13] High-Speed Growth of InN on Nitrided Yttria-Stabilized Zirconia (111) substrates Using a Two-Step Precursor Generation HVPE System

^○Chie Kojima¹, Rie Togashi¹, Hisashi Murakami¹, Yoshinao Kumagai¹, Akinori Koukitu¹ (Dept. of Appl. Chem., Tokyo Univ. of Agri. & Tech.¹)

5:30 PM - 5:45 PM

△ [17p-C5-14] Epitaxial growth of GaN thin films by reactive sputtering

^○Yuji Isosaki¹, Yuichiro Yamashita², Takashi Yagi², Junjun Jia¹, Naoyuki Taketoshi², Shinichi Nakamura¹, Yuzo Shigesato¹ (Aoyama Gakuin University¹, National Institute of Advanced Industrial Science and Technology²)

5:45 PM - 6:00 PM

[17p-C5-15] Influence of Sputtering Pressure on Surface Characteristics and Crystalline Quality of AlN Films Deposited by Pulsed DC Reactive Sputtering

^○(M1)Hiroto Takeuchi¹, Makoto Ohtsuka¹, Hiroyuki Fukuyama¹ (Tohoku Univ. IMRAM¹)

6:00 PM - 6:15 PM

[17p-C5-16] Growth of group III nitrides on hcp metals by pulsed sputtering deposition

^○Hyeryun Kim¹, Jitsuo Ohta¹, Ryuta Tanaka¹, Atsushi Kobayashi¹, Kohei Ueno¹, Hiroshi Fujioka^1,2 (The Univ. of Tokyo¹, JST-CREST²)

6:15 PM - 6:30 PM

[17p-C5-17] Growth of InN layer by UHV sputter epitaxy (Ⅱ)

^○(M2)Akiyori Tada¹, Yuki Kobashi¹, Susumu Fukui¹, Takeshi Koda¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (Tokyo Denki Univ.¹)

6:30 PM - 6:45 PM

[17p-C5-18] Growth of InN layer by UHV sputter epitaxy (III)

^○(M2)Susumu Fukui¹, Yuki Kobashi¹, Akiyori Tada¹, Takeshi Koda¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (Tokyo Denki Univ.¹)

Oral presentation

[18a-C5-1~15] 15.4 III-V-group nitride crystals

Thu. Sep 18, 2014 8:30 AM - 12:30 PM C5 (Open Hall)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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8:30 AM - 8:45 AM

[18a-C5-1] In distribution dependence on growth condition of InGaN analyzed by low temperature PL

^○Yudai Suzuki¹, Takeshi Momose¹, Takashi Teramoto², Christian Dussarrat², Katsushi Fujii¹, Masakazu Sugiyama¹, Yukihiro Shimogaki¹ (Univ. of Tokyo¹, Air Liquide Laboratories²)

8:45 AM - 9:00 AM

△ [18a-C5-2] Characterization of relaxation process in GaInN/GaN heterostructure

^○(M1)Koji Ishihara¹, Yasunari Kondo¹, Hiroyuki Matsubara¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (Meijo Univ.¹, Akasaki Reserchi Center, Nagoya Univ.²)

9:00 AM - 9:15 AM

△ [18a-C5-3] Tunnel junctions with high InN mole fractions （2）

^○(M2)Daichi Minamikawa¹, Masataka Ino¹, Daiki Takasuga¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (Meijo University¹, Akasaki Reserch Center²)

9:15 AM - 9:30 AM

△ [18a-C5-4] Fabrication of red, green, and blue light-emitting diodes by using MOVPE-grown N-polar (000\overline{1}) InGaN on sapphire substrate

^○Kanako Shojiki¹, Jung-Hun Choi¹, Tomoyuki Tanikawa^1,2, Shigeyuki Kuboya¹, Takashi Hanada^1,2, Ryuji Katayama^1,2, Takashi Matsuoka^1,2 (IMR, Tohoku Univ.¹, JST, CREST²)

9:30 AM - 9:45 AM

[18a-C5-5] The evaluation of polarity interface formation mechanism in GaN double polarity selective area growth by using MOVPE

^○(M1)Kenta Kuze¹, Youhei Fujita¹, Yoku Inoue¹, Takayuki Nakano¹ (Shizuoka Univ.¹)

9:45 AM - 10:00 AM

[18a-C5-6] Dependence of mask pattern for selective area growth of GaN nanocolumns by MOVPE

^○Naoyuki Mizuno¹, Takahiro Kato¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (Meijo Univ.¹, Akasaki Research Center, Nagoya Univ.²)

10:00 AM - 10:15 AM

[18a-C5-7] Thermal cleaning of sapphire substrates

^○Chia-Hung Lin¹, Shuhei Suzuki¹, Shunsuke Okada¹, Hideto Miyake¹, Kazumasa Hiramatsu¹ (Mie Univ.¹)

Break 10:15～10:30 （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

△ [18a-C5-8] Characterization of (In)GaN Epitaxial Layers Grown on ScAlMgO₄(0001) Substrates by Metal-organic Vapor Phase Epitaxy

^○(D)Takuya Ozaki¹, Mitsuru Funato¹, Yoichi Kawakami¹ (Kyoto Univ.¹)

10:45 AM - 11:00 AM

[18a-C5-9] Microscale evaluation of SiC layer by carbonization of Si surface using CO gas

^○Momoko Deura¹, Yutaka Ohno¹, Hiroyuki Fukuyama², Ichiro Yonenaga¹ (IMR, Tohoku Univ.¹, IMRAM, Tohoku Univ.²)

11:00 AM - 11:15 AM

[18a-C5-10] Growth GaN on 4-in.-diameter Si(110) substrates by MOCVD - Influence of the thin AlN/GaN superlattice interlayer periods -

^○xuqiang shen¹, tokio takahashi¹, toshihide ide¹, mitsuaki shimizu¹ (AIST¹)

11:15 AM - 11:30 AM

△ [18a-C5-11] NH₃ annealing of sapphire substrates for quality improvement of AlN and enhanced emission intensity of AlGaN/AlN quantum wells

^○Mami Shibaoka¹, Mitsuru Funato¹, Yoichi Kawakami¹ (Kyoto Univ.¹)

11:30 AM - 11:45 AM

△ [18a-C5-12] Direct Observation of Dominant Nonradiative Recombination Path in AlGaN-related Structures using Cathodoluminescence Mapping

^○(D)Shuhei Ichikawa¹, Mitsuru Funato¹, Yosuke Iwasaki², Yoichi Kawakami¹ (Kyoto Univ.¹, JFE Mineral Co. Ltd.²)

11:45 AM - 12:00 PM

[18a-C5-13] Optical polarization properties of Al_1-xIn_xN films grown on m-plane freestanding GaN substrates

^○Kazunobu Kojima¹, Hirotaka Ikeda², Kenji Fujito², Shigefusa Chichibu¹ (IMRAM-Tohoku Univ.¹, Mitsubishi Chemical Corp.²)

12:00 PM - 12:15 PM

[18a-C5-14] Emission characteristics of m-plane Al_1-xIn_xN epilayers grown on a freestanding GaN substrate by MOVPE (II)

^○SHigefusa Chichibu¹, Youichi Ishikawa¹, Tomomi Ohtomo¹, Kentaro Furusawa¹, Hirotaka Ikeda², Kenji Fujito² (Tohoku Univ.¹, Mitsubishi Chemical Corp.²)

12:15 PM - 12:30 PM

[18a-C5-15] Mg- doping Property of p-type High-Al-composition AlGaN Layer

^○hironori okumura¹, yoshitaka taniyasu¹, hideki yamamoto¹ (NTT BRL¹)

Oral presentation

[18p-C5-1~19] 15.4 III-V-group nitride crystals

Thu. Sep 18, 2014 1:30 PM - 7:15 PM C5 (Open Hall)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:30～13:30 （12:30 PM - 1:30 PM）

1:30 PM - 2:00 PM

[18p-C5-1] [JSAP Paper Award Speech]（30min.）
Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

^○Toru Kinoshita^1,2, Toshiyuki Obata¹, Toru Nagashima¹, Hiroyuki Yanagi¹, Baxter Moody³, Seiji Mita³, Shin-ichiro Inoue^2,4, Yoshinao Kumagai⁵, Akinori Koukitu⁵, Zlatko Sitar^3,6 (Tokuyama¹, Kobe University², HexaTech³, NICT⁴, Tokyo University of Agriculture and Technology⁵, North Carolina State University⁶)

2:00 PM - 2:15 PM

[18p-C5-2] AlN Growth Temperature Dependence on the GaN/AlN/GaN Water Splitting Photocathode

^○Akihiro Nakamura¹, Katsushi Fujii², Masakazu Sugiyama¹, Yoshiaki Nakano¹ (Tokyo Univ.¹, Global Solar+ Initiative²)

2:15 PM - 2:30 PM

[18p-C5-3] Study of the high reflective Ag electrode on high carrier concentration Si-doped Al0.03Ga0.97N

^○Shunsuke Kawai¹, Daisuke Iida¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (Meijo Univ.¹, ARC.Inst²)

2:30 PM - 2:45 PM

▲ [18p-C5-4] High light-extraction efficiency induced by evanescent wave coupling effect in GaN-based light-emitting diodes

^○(P)Guodonog HAO¹, Ahmed Mohammed Jahir¹, Tokio Takahashi¹, Mitsuaki Shimizu¹, Xue-Lun Wang¹, Hiroyuki Kishi², Yukiko Hayashi², Keigo Takeguchi² (AIST¹, Asahi Kasei Corp.²)

2:45 PM - 3:00 PM

[18p-C5-5] Improvement in performance of GaN-based LED using ZnO transparent electrode

^○Yuta Akatsuka¹, Takashi Egawa¹, Makoto Miyoshi¹ (Nagoya Institute of Technology¹)

3:00 PM - 3:15 PM

[18p-C5-6] Low resistance of current confinement structures using nitride-based tunnel junctions

^○Masataka Ino¹, Daichi Minamikawa¹, Tetuya Takeuchi¹, Satosi Kamiyama¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (Fac.Sci.&Eng,Meijo Univ.¹, ARC,Nagoya Univ.²)

3:15 PM - 3:30 PM

[18p-C5-7] High-speed Optical Output Modulation of Nitride-based Light-Emitting Transistors

^○Kazuhide Kumakura¹, Hideki Yamamoto¹ (NTT BRL¹)

Break 15:30～15:45 （3:30 PM - 3:45 PM）

3:45 PM - 4:15 PM

[18p-C5-8] [JSAP Paper Award Speech]（30min.）
Remarkably Suppressed Luminescence Inhomogeneity in a (0001) InGaN Green Laser Structure

^○Mitsuru Funato¹, Yoon Seok Kim¹, Takayuki Hira¹, Akio Kaneta¹, Yoichi Kawakami¹, Takashi Miyoshi², Shin-ichi Nagahama² (Kyoto University¹, Nichia²)

4:15 PM - 4:30 PM

△ [18p-C5-9] Modulation spectroscopic investigation on internal electric fields in InGaN/GaN LEDs

^○Tomoyuki Tanikawa^1,2, Ryuji Katayama^1,2, Kanako Shojiki¹, Shigeyuki Kuboya¹, Takashi Matsuoka^1,2, Yoshio Honda³, Hiroshi Amano^3,4 (IMR, Tohoku Univ.¹, JST-CREST², Nagoya Univ.³, Akasaki Research Center⁴)

4:30 PM - 4:45 PM

[18p-C5-10] Optical characterization of InGaN/GaN single quantum well nanostructures fabricated by hydrogen environment anisotropic thermal etching (HEATE) technique

^○Ryo Hachiya¹, Ryo Kita¹, Akihiko Kikuchi^1,2 (Sophia Univ.¹, Sophia Nanotechnology Center²)

4:45 PM - 5:00 PM

[18p-C5-11] Fabrication of GaN nanostructures by hydrogen environment anisotropic thermal etching (HEATE) technique and thermal analysis

^○Ryo Kita¹, Ryo Hachiya¹, Akihiko Kikuchi^1,2 (Sophia Univ.¹, Sophia Nanotechnology Research Center²)

5:00 PM - 5:15 PM

[18p-C5-12] Analysis of Lattice Distortion of Superlattice Structure of Nitride Semiconductor by Molecular Dynamics

^○(M2)Masahiro Amekawa¹, Yoshinori Yoshimura¹, Takahiro Kawamura¹, Yasuyuki Suzuki¹, Yoshihiro Kangawa², Koichi Kakimoto² (Mie Univ.¹, RIAM,Kyushu Univ.²)

5:15 PM - 5:30 PM

[18p-C5-13] Theoretical study for surface reconstructions and adsorption-desorption behavior of Al atom on AlN semipolar surfaces

^○Yoshitaka Takemoto¹, Toru Akiyama¹, Kohji Nakamura¹, Tomonori Ito¹ (Mie Univ.¹)

5:30 PM - 5:45 PM

[18p-C5-14] Nitride semiconductor to silicon direct bonding at room temperature

^○Kazuaki Tsuchiyama¹, Hiroyuki Tahara¹, Keisuke Yamane¹, Hiroto Sekiguchi¹, Hiroshi Okada^1,2, Akihiro wakahara¹ (Toyohashi Univ. Tech¹, EIIRIS²)

Break 17:45～18:00 （5:45 PM - 6:00 PM）

6:00 PM - 6:15 PM

[18p-C5-15] First-Principles Calculation of C-N Bond Energy on GaN Growth Surface

^○Takahiro Kawamura^1,2, Hiroki Imabayashi², Mihoko Maruyama², Mamoru Imade², Masashi Yoshimura², Yusuke Mori², Yoshitada Morikawa² (Mie Unv.¹, Osaka Univ.²)

6:15 PM - 6:30 PM

[18p-C5-16] Growth of high transparency semipolar GaN crystals by the Na-flux method

^○Koshi Nakamura¹, Hideo Takazawa¹, Mihoko Maruyama¹, Mamoru Imade¹, Masashi Yoshimura¹, Songbaek Choe^1,2, Yukihiro Morita^1,2, Yusuke Mori¹ (Graduate school of Engineering, Osaka Univ.¹, Panasonic Corporation.²)

6:30 PM - 6:45 PM

[18p-C5-17] Fabrication of Al-polar AlN layers by Liquid Phase Epitaxy using Ga-Al solution under low oxygen partial pressure

^○(M1)Ryuta Sekiya¹, Masayoshi Adachi¹, Makoto Ohtsuka¹, Masashi Sugiyama², Junji Ida², Hiroyuki Fukuyama¹ (Tohoku Univ. IMRAM¹, Sumitomo Metal Mining Co. Ltd.²)

6:45 PM - 7:00 PM

[18p-C5-18] High speed & high quality bulk GaN crystal growth by acidic ammonothermal method

^○Makoto Saito^1,2, Quanxi Bao^1,3, Kouhei Kurimoto^1,3, Daisuke Tomida¹, Kazunobu Kojima¹, Yoshiki Yamazaki¹, Yuji Kagamitani², Rinzo Kayano³, Kun Qiao¹, Toru Ishiguro¹, Chiaki Yokoyama¹, Shigefusa Chichibu¹ (IMRAM-Tohoku Univ.¹, Mitsubishi Chemical Corp.², The Japan Steel Works³)

7:00 PM - 7:15 PM

△ [18p-C5-19] GaN lateral growth by liquid phase electro epitaxy using mesa-shaped template substrate

^○Hiroyuki Takakura¹, Masafumi Tomita¹, Daisuke Kambayashi¹, Muneki Iwakawa¹, Yousuke MIzuno¹, Jyumpei Yamada¹, Ryouta Yasui¹, Takahiro Maruyama¹, Shigeya Naritsuka¹ (Meijo Univ.¹)

Poster presentation

[19p-PB6-1~26] 15.4 III-V-group nitride crystals

Fri. Sep 19, 2014 4:00 PM - 6:00 PM PB6 (Gymnasium2)

ポスター掲示時間16:00～18:00(PB6会場)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:00 PM - 6:00 PM

[19p-PB6-1] Numerical simulation of ammonothermal GaN bulk single crystal process with considering physical properties

^○Yoshio Masuda¹, Mitsuhiro Kanakubo¹, Daisuke Tomida², Chiaki Yokoyama² (AIST¹, IMRAM Tohoku Univ.²)

4:00 PM - 6:00 PM

△ [19p-PB6-2] Relationship between Thicknesses and the Lattice Curvature of GaN Crystals Grown on Point Seeds in the Na-Flux Coalescence Growth

^○Masayuki Imanishi¹, Yuma Todoroki¹, Kousuke Murakami¹, Hiroki Imabayashi¹, Daisuke Matsuo¹, Hideo Takazawa¹, Mihoko Maruyama¹, Mamoru Imade¹, Masashi Yoshimura¹, Yusuke Mori¹ (Osaka Univ.¹)

4:00 PM - 6:00 PM

[19p-PB6-3] Investigation of a-plane GaN growth on r-plane sapphire

^○Takahisa Kato¹, Naoyuki Mizuno¹, Hiroaki Ito¹, Daisuke Iida², Takashi Fujii³, Tsuguo Fukuda⁴, Satoshi Kamiyama¹, Tetuya Takeuchi¹, Motoaki Iwaya¹, Isamu Akasaki^1,5 (Meijo Univ¹, Tokyo Univ. of Science², Ritsumeikan Univ³, Fukuda X'tal Laboratory⁴, ARC.Inst⁵)

4:00 PM - 6:00 PM

[19p-PB6-4] A Study of pretreatment process on selective area growth of GaN using SiN masks

^○Shin Man¹, Rei Kayanuma¹, Yusuke Takei¹, Tokio Takahashi³, Toshihide Ide³, Mitsuaki Shimizu³, Kazuo Tsutsui¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Yoshinori Kataoka², Hiroshi Iwai² (Tokyo Tech.¹, JASRI², AIST³)

4:00 PM - 6:00 PM

[19p-PB6-5] Fabrication of Pseudo Aluminum Growth of GaN by RF-MBE

^○(M2)Shinya Osawa¹, Yuto Watnabe¹, Takeyoshi Onuma^1,2, Tomohiro Yamaguchi¹, Tohru Honda¹ (Kogakuin Univ.¹, Tokyo National College of Technology²)

4:00 PM - 6:00 PM

[19p-PB6-6] Photoluminescence study of GaN layers grown on pseudo Al substrates

^○Yuto Watanabe¹, Shinya Osawa¹, Takeyoshi Onuma^1,2, Tomohiro Yamaguchi¹, Tohru Honda¹ (Kogakuin Univ.¹, TNCT²)

4:00 PM - 6:00 PM

▼ [19p-PB6-7] Study on Homo-Epitaxial Growth of GaN by Radical-Enhanced Metal-Organic Chemical Vapor Deposition (REMOCVD)

^○(P)Yi Lu¹, Osamu Oda¹, Hiroki Kondo¹, Kenji Ishikawa¹, Makoto Sekine¹, Masaru Hori¹ (Nagoya Univ.¹)

4:00 PM - 6:00 PM

[19p-PB6-8] Design of boat for convection-enhanced Liquid Phase Epitaxy of GaN by using 3D printer

^○Muneki Iwakawa¹, Hiroyuki Takakura¹, Masahumi Tomita¹, Daisuke Kambayashi¹, Ryota Yasui¹, Yosuke Mizuno¹, Jumpei Yamada¹, Takahiro Maruyama¹, Shigeya Narituka¹ (Meijo Univ.¹)

4:00 PM - 6:00 PM

[19p-PB6-9] RF-MBE Growth of a-plane InN on an r-plane Sapphire Substrate

^○Michiya Maeda¹, Taiki Hata¹, Takahiro Yamazaki¹, Yusuke Yamane¹, Toshiki Makimoto¹ (Waseda Univ.¹)

4:00 PM - 6:00 PM

[19p-PB6-10] Selective Area Growth of Sublimation AlN using metal mask

^○Ryoma Hakamata¹, Yoshio Honda¹, Hiroshi Amano^1,2 (Nagoya Univ.¹, ARC²)

4:00 PM - 6:00 PM

[19p-PB6-11] Impact of superlattice periods beneath active layer on optical properties of InGaN-based light-emitting diodes

^○Narihito Okada¹, Yoichi Yamada¹, Kazuyuki Tadatomo¹ (Yamaguchi Univ.¹)

4:00 PM - 6:00 PM

[19p-PB6-12] Impact of superlattice beneath active layer on electrical properties of InGaN-based light-emitting diodes

^○Narihito Okada¹, Yoichi Yamada¹, Kazuyuki Tadatomo¹ (Yamaguchi Univ.¹)

4:00 PM - 6:00 PM

[19p-PB6-13] In composition dependence of radiative and non-radiative recombination dynamics in InGaN-based quantum wells

^○Hideyuki Hirao¹, Ryuto Inui¹, Yusuke Tanaka¹, Satosi Kurai¹, Narihito Okada¹, Kazuyuki Tadatomo¹, Yoichi Yamada¹ (Yamaguchi Univ.¹)

4:00 PM - 6:00 PM

[19p-PB6-14] Microscopic distribution of luminescence around dark spots in InGaN quantum wells

^○Daisuke Hosokawa¹, Yuki Tachiyama¹, Renma Mihara¹, Syou Fujii¹, Satoshi Kurai¹, Narihito Okada¹, Kazuyuki Tadatomo¹, Yoichi Ymada¹ (Yamaguchidaiinrikou¹)

4:00 PM - 6:00 PM

[19p-PB6-15] InGaN/GaN multi-quantum well growth on semi-polar by raised pressure MOVPE

^○Akira Tamura^1,2, Yoshio Honda^1,2, Hiroshi Amano^1,2 (Nagoya Univ.¹, Akasaki Research Center²)

4:00 PM - 6:00 PM

[19p-PB6-16] Luminescent properties of InGaN/GaN multiple quantum wells on semipolar facets formed using selective-area growth of Eu-doped GaN

^○Takanori Kojima¹, Shota Takano¹, Ryousuke Hasegawa¹, Dolf Timmerman¹, Atsushi Kozumi¹, Mitsuru Funato², Yoichi Kawakami², Yasuhumi Fujiwara¹ (Osaka Univ.¹, Kyoto Univ.²)

4:00 PM - 6:00 PM

[19p-PB6-17] PLE spectroscopy of AlGaN-based quantum wells at higher temperatures

^○Tomonori Fukuno¹, Katsuto Nakamura¹, Taira Izumi¹, Satoshi Kurai¹, Hideto Miyake², Kazumasa Hiramatsu², Yoichi Yamada¹ (Yamaguchi Univ.¹, Mie Univ.²)

4:00 PM - 6:00 PM

[19p-PB6-18] PLE spectroscopy of AlGaN epitaxial layers at higher temperatures

^○Fumiya Nakao¹, tomoyuki Nagasaka¹, Takuto Tsurumaru¹, Satoshi Kurai¹, Hideto Miyake², Kazumasa Hiramatsu², Yoichi Yamada¹ (Yamaguchi Univ.¹, Mie Univ.²)

4:00 PM - 6:00 PM

[19p-PB6-19] Study on Local Spectra of Al_0.61Ga_0.39N Epitaxial Films with Different Si Concentration by Cathodoluminescence Method

^○Satoshi Kurai¹, Hideto Miyake², Kazumasa Hiramatsu², Yoichi Yamada¹ (Yamaguchi Univ.¹, Mie Univ.²)

4:00 PM - 6:00 PM

[19p-PB6-20] Improvement of Properties of InAlN/GaN Heterostructure Using LT-AlN Spacer

^○(M2)Tatsuya Ito¹, Arata Watanabe¹, Keita Inoue¹, Takashi Egawa¹ (Nagoya Inst. of Tech.¹)

4:00 PM - 6:00 PM

[19p-PB6-21] 280nm AlGaN UVC LED using p-AlGaN superlattice transparent hole- spreading contact layer

^○Noritoshi Maeda¹, Masafumi Jo¹, Hideki Hirayama¹ (RIKEN¹)

4:00 PM - 6:00 PM

[19p-PB6-22] Dependence of III-V nitride solar cell properties on Mg-doping and carrier density in InGaN

^○Masatomo Sumiya^1,2, Toru Honda³, Liwen Sang¹, Yoshitaka Nakano⁴, Fumio Hasegawa⁴ (NIMS¹, JST-ALCA², Kougakuinn Univ.³, Chubu Univ.⁴)

4:00 PM - 6:00 PM

▲ [19p-PB6-23] Detail Study on Lattice Deformation and Recovery of GaN by Mg-ion-implantation and the Subsequent Thermal Annealing

^○(DC)Zheng Sun¹, Marc Olsson¹, Di Lu¹, Tsutomu Nagayama³, Tetsuya Watanabe⁴, Yoshio Honda¹, Hiroshi Amano^1,2 (Nagoya Univ.¹, Akasaki Research Center², Nissin Ion Equipment Co., Ltd.³, Nissin Electric Co., Ltd.⁴)

4:00 PM - 6:00 PM

[19p-PB6-24] The SRH model correction by the photocurrent measurements under reverse bias

^○Shigeyoshi Usami¹, Yoshio Honda¹, Hiroshi Amano^1,2 (Nagoya Univ.¹, Akasaki Research Center²)

4:00 PM - 6:00 PM

▲ [19p-PB6-25] Realization of vertically well-aligned GaN nanowire based core-shell array growth by MOVPE : Morphology evolution and luminescent properties

^○(D)Byungoh Jung¹, Si-Young Bae¹, Masataka Imura², Yoshio Honda¹, Hiroshi Amano¹ (Nagoya Univ¹, NIMS²)

4:00 PM - 6:00 PM

[19p-PB6-26] Interacting Quasi Band Model for Electronic States in Alloy Semiconductors

^○Yuzo Shinozuka¹ (Wakayama Univ.¹)

Oral presentation

[20a-C5-1~12] 15.4 III-V-group nitride crystals

Sat. Sep 20, 2014 8:30 AM - 12:00 PM C5 (Open Hall)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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8:30 AM - 9:00 AM

[20a-C5-1] [JSAP Paper Award Speech]（30min.）
Photoluminescence Excitation Spectroscopy on Single GaN Quantum Dots

Paweł Podemski^1,2, ^○Mark Holmes¹, Satoshi Kako¹, Munetaka Arita¹, and Yasuhiko Arakawa¹ (The University of Tokyo¹, Wrocław University of Technology²)

9:00 AM - 9:15 AM

[20a-C5-2] Structural and optical characterization of localization centers in Al_xGa_1-x(x < 0.25) thin films

^○Taichi Iki¹, Munetaka Arita², Satoshi Kako¹, Yasuhiko Arakawa^1,2 (IIS, Univ. of Tokyo¹, NanoQuine, Univ. of Tokyo²)

9:15 AM - 9:30 AM

[20a-C5-3] Observation of narrow photoluminescence linewidth [40 μeV] from localization centers in Al_xGa_1-xN (x < 0.25) thin films

^○Munetaka Arita¹, Taichi Iki², Satoshi Kako², Yasuhiko Arakawa^1,2 (NanoQuine, Univ. of Tokyo¹, IIS, Univ. of Tokyo²)

9:30 AM - 9:45 AM

△ [20a-C5-4] Column Diameter Dependence of Emission Lifetime in InGaN Nanocolumns

^○Yutaro Mizuno^1,2, Takao Oto^1,2, Tatsuya Kano^1,2, Rin Miyagawa^1,2, Jun Yoshida^1,2, Katsumi Kishino^1,2 (Sophia Univ.¹, Sophia Nanotech. Res. Center²)

9:45 AM - 10:00 AM

[20a-C5-5] In-plane Distribution of Light Emission and Carrier Dynamics in InGaN Nanocolumns

^○Takao Oto^1,2, Yutaro Mizuno^1,2, Rin Miyagawa^1,2, Tatsuya Kano^1,2, Jun Yoshida^1,2, Mitsuru Funato³, Yoichi Kawakami³, Katsumi Kishino^1,2 (Sophia Univ.¹, Sophia Univ. Nanotech. Res. Center², Kyoto Univ.³)

Break 10:00～10:15 （10:00 AM - 10:15 AM）

10:15 AM - 10:30 AM

[20a-C5-6] Photogenerated Carrier Dynamics of InGaN/GaN Regularly Arranged Nanocolumns I

^○Naoki Shimosako¹, Yuta Inose¹, Kazuhiro Ema^1,2, Katsumi Kishino^1,2 (Sophia Univ.¹, Sophia Nanotechnology Research Center²)

10:30 AM - 10:45 AM

[20a-C5-7] Photogenerated Carrier Dynamics of InGaN/GaN Regularly Arranged Nanocolumns II

^○(PC)Yuta Inose¹, Naoki Shimosako¹, Kazuhiro Ema^1,2, Katsumi Kishino^1,2 (Sophia Univ.¹, Sophia Nanotechnology Research Center²)

10:45 AM - 11:00 AM

[20a-C5-8] Self-formation of cap layer modes on InGaN-based nanocolumn photonic crystals

^○Yuki Sumikawa¹, Shunsuke Ishizawa¹, Katsumi Kishino^1,2 (Sophia Univ.¹, Sophia Nanotechnology Research Center²)

11:00 AM - 11:15 AM

[20a-C5-9] Photoluminescence radiation characteristics of nanocolumn photonic crystals for laser application

^○(PC)Shunsuke Ishizawa¹, Yuki Sumikawa¹, Kai Motoyama¹, Katsumi Kishino^1,2 (Sophia Univ.¹, Sophia Nanotechnology Research Center²)

11:15 AM - 11:30 AM

△ [20a-C5-10] Stimulated emission characteristics of the semi-polar plane InGaN optical cavity on (001) Si substrate

^○Maki Kushimoto¹, Yoshio Honda¹, Hiroshi Amano^1,2 (Nagoya Univ.¹, ARC²)

11:30 AM - 11:45 AM

△ [20a-C5-11] Carrier dynamics in InGaN single quantum wells on (0001) GaN substrates assessed by scanning near field optical microscopy

^○Takayuki Hira¹, Mitsuru Funato¹, Yoichi Kawakami¹, Takashi Miyoshi², Shin-ichi Nagahama² (Kyoto Univ.¹, Nichia Corp.²)

11:45 AM - 12:00 PM

[20a-C5-12] Excitation energy density dependence of nonradiative recombination lifetime and internal quantum efficiency in InGaN-based quantum wells

^○Hideaki Murotani¹, Toko Sugiura¹, Yoichi Yamada², Yoshio Honda³, Hiroshi Amano³ (Toyota Natl. Coll. of Technol.¹, Yamaguchi Univ.², Nagoya Univ.³)

Oral presentation

[20p-C5-1~8] 15.4 III-V-group nitride crystals

Sat. Sep 20, 2014 1:00 PM - 3:00 PM C5 (Open Hall)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:00～13:00 （12:00 PM - 1:00 PM）

1:00 PM - 1:15 PM

[20p-C5-1] [Young Scientist Oral Presentation Award Speech]（15min.）
Optical Properties of Semipolar (11\overline{2}2) InGaN/AlGaN Stress-Compensated Superlattices

^○Junichi Nishinaka¹, Mitsuru Funato¹, Yoichi Kawakami¹ (Kyoto Univ.¹)

1:15 PM - 1:30 PM

[20p-C5-2] Relaxation Process of Excitons of In-rich InGaN Quantum Wells Structure Grown by MOVPE

^○Kazuki Nagasawa¹, Kensuke Miyajima¹, Kazuhiro Ohkawa¹ (Tokyo University of Science¹)

1:30 PM - 1:45 PM

[20p-C5-3] The energy relaxation process of carrier and exciton in GaN

^○Bei Ma¹, Yuki Yamaguchi¹, Kenji Takahashi¹, Kei Goto¹, Kazuma Takeuchi¹, Tomohiro Iwahori¹, Ken Morita¹, Yoshihiro Ishitani¹, Hideto Miyake², kazumasa Hiramatsu² (Chiba Univ.¹, Mie Univ.²)

1:45 PM - 2:00 PM

[20p-C5-4] Emission properties of AlO_x/AlN/GaN heterostructures grown by RF-MBE

^○Takeyoshi Onuma^1-3, Yohei Sugiura^2,3, Tomohiro Yamaguchi², Tohru Honda², Masataka Higashiwaki³ (TNCT¹, Kogakuin Univ.², NICT³)

2:00 PM - 2:15 PM

[20p-C5-5] Effect of Mg codoping into Eu doped AlGaN

^○Masayoshi Kanemoto¹, Hiroto Sekiguchi¹, Masaru Sakai², Atushi Shouji², Hiroshi Okada¹, Akihiro Wakahara¹ (Toyohashi Tech.¹, Yamanashi Univ.²)

2:15 PM - 2:30 PM

[20p-C5-6] Exciton-phonon interaction in AlGaN ternary alloys

^○Ryan Banal¹, Yoshitaka Taniyasu¹, Hideki Yamamoto¹ (NTT Basic Research Laboratories¹)

2:30 PM - 2:45 PM

[20p-C5-7] Improved emission efficiency of Si-doped AlGaN MQWs by compositional modulation

^○Yoshiki Yamazaki¹, Kentaro Furusawa¹, Kazunobu Kojima¹, Kazuhiro Nakahama², Hideto Miyake², Kazumasa Hiramatsu², Shigefusa Chichibu¹ (IMRAM-Tohoku Univ.¹, Mie Univ.²)

2:45 PM - 3:00 PM

△ [20p-C5-8] Well-defined LO Phonon Replicas for Homo-epitaxial AlGaN/AlN Quantum Wells Observed by Microscopic PL Measurements

^○(D)Yoshiya Iwata¹, Shuhei Ichikawa¹, Mitsuru Funato¹, Yoichi Kawakami¹ (Dept. of Electronic Sci. and Eng., Kyoto Univ.¹)

Sessions

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[17a-C5-1~10] 15.4 III-V-group nitride crystals

△ [17a-C5-7] Controllability of ultra-thin GaN layer growth in AlN/GaN multi-layered structure grown by PAMBE

△ [17a-C5-8] Thinning of Regularly Arranged GaN Nanocolumns ～Realization of Nanocolumns with a diameter as narrow as 34 nm～

[17p-C5-1~18] 15.4 III-V-group nitride crystals

△ [17p-C5-10] Synthesis of single-crystalline AlN nanowires by nitridation of multi-component melt

△ [17p-C5-11] Determination of experimental condition using chemical equilibrium calculations in AlN solution growth

△ [17p-C5-14] Epitaxial growth of GaN thin films by reactive sputtering

[18a-C5-1~15] 15.4 III-V-group nitride crystals

△ [18a-C5-2] Characterization of relaxation process in GaInN/GaN heterostructure

△ [18a-C5-3] Tunnel junctions with high InN mole fractions （2）

△ [18a-C5-4] Fabrication of red, green, and blue light-emitting diodes by using MOVPE-grown N-polar (000\overline{1}) InGaN on sapphire substrate

△ [18a-C5-8] Characterization of (In)GaN Epitaxial Layers Grown on ScAlMgO4(0001) Substrates by Metal-organic Vapor Phase Epitaxy

△ [18a-C5-11] NH3 annealing of sapphire substrates for quality improvement of AlN and enhanced emission intensity of AlGaN/AlN quantum wells

△ [18a-C5-12] Direct Observation of Dominant Nonradiative Recombination Path in AlGaN-related Structures using Cathodoluminescence Mapping

[18p-C5-1~19] 15.4 III-V-group nitride crystals

▲ [18p-C5-4] High light-extraction efficiency induced by evanescent wave coupling effect in GaN-based light-emitting diodes

△ [18p-C5-9] Modulation spectroscopic investigation on internal electric fields in InGaN/GaN LEDs

△ [18p-C5-19] GaN lateral growth by liquid phase electro epitaxy using mesa-shaped template substrate

[19p-PB6-1~26] 15.4 III-V-group nitride crystals

△ [19p-PB6-2] Relationship between Thicknesses and the Lattice Curvature of GaN Crystals Grown on Point Seeds in the Na-Flux Coalescence Growth

▼ [19p-PB6-7] Study on Homo-Epitaxial Growth of GaN by Radical-Enhanced Metal-Organic Chemical Vapor Deposition (REMOCVD)

▲ [19p-PB6-23] Detail Study on Lattice Deformation and Recovery of GaN by Mg-ion-implantation and the Subsequent Thermal Annealing

▲ [19p-PB6-25] Realization of vertically well-aligned GaN nanowire based core-shell array growth by MOVPE : Morphology evolution and luminescent properties

[20a-C5-1~12] 15.4 III-V-group nitride crystals

△ [20a-C5-4] Column Diameter Dependence of Emission Lifetime in InGaN Nanocolumns

△ [20a-C5-10] Stimulated emission characteristics of the semi-polar plane InGaN optical cavity on (001) Si substrate

△ [20a-C5-11] Carrier dynamics in InGaN single quantum wells on (0001) GaN substrates assessed by scanning near field optical microscopy

[20p-C5-1~8] 15.4 III-V-group nitride crystals

△ [20p-C5-8] Well-defined LO Phonon Replicas for Homo-epitaxial AlGaN/AlN Quantum Wells Observed by Microscopic PL Measurements

△ [18a-C5-8] Characterization of (In)GaN Epitaxial Layers Grown on ScAlMgO₄(0001) Substrates by Metal-organic Vapor Phase Epitaxy

△ [18a-C5-11] NH₃ annealing of sapphire substrates for quality improvement of AlN and enhanced emission intensity of AlGaN/AlN quantum wells