[20a-C5-1~12] 15.4 III-V-group nitride crystals

[20a-C5-12] Excitation energy density dependence of nonradiative recombination lifetime and internal quantum efficiency in InGaN-based quantum wells

^○Hideaki Murotani¹, Toko Sugiura¹, Yoichi Yamada², Yoshio Honda³, Hiroshi Amano³ (Toyota Natl. Coll. of Technol.¹, Yamaguchi Univ.², Nagoya Univ.³)

Keywords:InGaN量子井戸構造,内部量子効率,非輻射再結合寿命