Carrier dynamics in InGaN single quantum wells on (0001) GaN substrates assessed by scanning near field optical microscopy

Presentation information

Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

Sat. Sep 20, 2014 8:30 AM - 12:00 PM C5 (Open Hall)

11:30 AM - 11:45 AM

^○Takayuki Hira¹, Mitsuru Funato¹, Yoichi Kawakami¹, Takashi Miyoshi², Shin-ichi Nagahama² (Kyoto Univ.¹, Nichia Corp.²)

Keywords:InGaN,顕微分光