Emission characteristics of m-plane Al<sub>1-x</sub>In<sub>x</sub>N epilayers grown on a freestanding GaN substrate by MOVPE (II)

SHigefusa Chichibu

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Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[18a-C5-1~15] 15.4 III-V-group nitride crystals

Thu. Sep 18, 2014 8:30 AM - 12:30 PM C5 (Open Hall)

12:00 PM - 12:15 PM

[18a-C5-14] Emission characteristics of m-plane Al_1-xIn_xN epilayers grown on a freestanding GaN substrate by MOVPE (II)

^○SHigefusa Chichibu¹, Youichi Ishikawa¹, Tomomi Ohtomo¹, Kentaro Furusawa¹, Hirotaka Ikeda², Kenji Fujito² (Tohoku Univ.¹, Mitsubishi Chemical Corp.²)

Keywords:AlInN

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Presentation information

[18a-C5-1~15] 15.4 III-V-group nitride crystals

[18a-C5-14] Emission characteristics of m-plane Al1-xInxN epilayers grown on a freestanding GaN substrate by MOVPE (II)

[18a-C5-14] Emission characteristics of m-plane Al_1-xIn_xN epilayers grown on a freestanding GaN substrate by MOVPE (II)