Effect of in situ N2 micro plasma treatment on initial growth of GaN by MOMBE

Presentation information

Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

Wed. Sep 17, 2014 9:00 AM - 11:45 AM C5 (Open Hall)

10:30 AM - 10:45 AM

^○Yohei Suzuki¹, Yasuhiro Kusakabe¹, Takahiro Maruyama¹, Shigeya Narituka¹, Kazuo Shimizu², Shogo Kaneda² (Meijo Univ.¹, Shizuoka Univ.²)

Keywords:GaN