The 75th JSAP Autumn Meeting, 2014

Presentation information

Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[17a-C5-1~10] 15.4 III-V-group nitride crystals

Wed. Sep 17, 2014 9:00 AM - 11:45 AM C5 (Open Hall)

10:00 AM - 10:15 AM

[17a-C5-5] Influence of mono-layer Graphene on growth process of GaN on mono-layer Graphene/SiO2-film/Si(001) substrate by ECR-MBE method (II)

Tokuo Yodo1, Nan Yang1, Tomoaki Ishikawa1, Satoru Kaneko3,2, Daishi Shiojiri2, Akifumi Matsuda2, Mamoru Yoshimoto2 (Osaka Inst. of Tech.1, Tokyo Inst. of Tech.2, Kanagawa Ind. Tech. Center3)

Keywords:グラフェン,GaN