The 75th JSAP Autumn Meeting, 2014

Presentation information

Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[17p-C5-1~18] 15.4 III-V-group nitride crystals

Wed. Sep 17, 2014 1:15 PM - 6:45 PM C5 (Open Hall)

6:30 PM - 6:45 PM

[17p-C5-18] Growth of InN layer by UHV sputter epitaxy (III)

○(M2)Susumu Fukui1, Yuki Kobashi1, Akiyori Tada1, Takeshi Koda1, Hiroyuki Shinoda1, Nobuki Mutsukura1 (Tokyo Denki Univ.1)

Keywords:InN