The 75th JSAP Autumn Meeting, 2014

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Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[18p-C5-1~19] 15.4 III-V-group nitride crystals

Thu. Sep 18, 2014 1:30 PM - 7:15 PM C5 (Open Hall)

2:30 PM - 2:45 PM

▲ [18p-C5-4] High light-extraction efficiency induced by evanescent wave coupling effect in GaN-based light-emitting diodes

○(P)Guodonog HAO1, Ahmed Mohammed Jahir1, Tokio Takahashi1, Mitsuaki Shimizu1, Xue-Lun Wang1, Hiroyuki Kishi2, Yukiko Hayashi2, Keigo Takeguchi2 (AIST1, Asahi Kasei Corp.2)

Keywords:light emitting diode,GaN, efficiency