The 75th JSAP Autumn Meeting, 2014

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Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[20p-C5-1~8] 15.4 III-V-group nitride crystals

Sat. Sep 20, 2014 1:00 PM - 3:00 PM C5 (Open Hall)

2:30 PM - 2:45 PM

[20p-C5-7] Improved emission efficiency of Si-doped AlGaN MQWs by compositional modulation

○Yoshiki Yamazaki1, Kentaro Furusawa1, Kazunobu Kojima1, Kazuhiro Nakahama2, Hideto Miyake2, Kazumasa Hiramatsu2, Shigefusa Chichibu1 (IMRAM-Tohoku Univ.1, Mie Univ.2)

Keywords:組成変調量子井戸,Si doped AlGaN