The 75th JSAP Autumn Meeting, 2014

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Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[18a-C5-1~15] 15.4 III-V-group nitride crystals

Thu. Sep 18, 2014 8:30 AM - 12:30 PM C5 (Open Hall)

8:30 AM - 8:45 AM

[18a-C5-1] In distribution dependence on growth condition of InGaN analyzed by low temperature PL

○Yudai Suzuki1, Takeshi Momose1, Takashi Teramoto2, Christian Dussarrat2, Katsushi Fujii1, Masakazu Sugiyama1, Yukihiro Shimogaki1 (Univ. of Tokyo1, Air Liquide Laboratories2)

Keywords:InGaN,MOVPE,低温PL