The evaluation of polarity interface formation mechanism in GaN double polarity selective area growth by using MOVPE

Presentation information

Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

Thu. Sep 18, 2014 8:30 AM - 12:30 PM C5 (Open Hall)

9:30 AM - 9:45 AM

^○(M1)Kenta Kuze¹, Youhei Fujita¹, Yoku Inoue¹, Takayuki Nakano¹ (Shizuoka Univ.¹)

Keywords:GaN,MOVPE,極性