[18a-C5-1~15] 15.4 III-V-group nitride crystals

△ [18a-C5-4] Fabrication of red, green, and blue light-emitting diodes by using MOVPE-grown N-polar (000\overline{1}) InGaN on sapphire substrate

^○Kanako Shojiki¹, Jung-Hun Choi¹, Tomoyuki Tanikawa^1,2, Shigeyuki Kuboya¹, Takashi Hanada^1,2, Ryuji Katayama^1,2, Takashi Matsuoka^1,2 (IMR, Tohoku Univ.¹, JST, CREST²)

Keywords:InGaN,N極性面,MOVPE