Emission properties of AlO<sub>x</sub>/AlN/GaN heterostructures grown by RF-MBE

Presentation information

Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

Sat. Sep 20, 2014 1:00 PM - 3:00 PM C5 (Open Hall)

1:45 PM - 2:00 PM

^○Takeyoshi Onuma^1-3, Yohei Sugiura^2,3, Tomohiro Yamaguchi², Tohru Honda², Masataka Higashiwaki³ (TNCT¹, Kogakuin Univ.², NICT³)

Keywords:GaN,AlN,AlO