NH<sub>3</sub> annealing of sapphire substrates for quality improvement of AlN and enhanced emission intensity of AlGaN/AlN quantum wells

Presentation information

Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

Thu. Sep 18, 2014 8:30 AM - 12:30 PM C5 (Open Hall)

11:15 AM - 11:30 AM

^○Mami Shibaoka¹, Mitsuru Funato¹, Yoichi Kawakami¹ (Kyoto Univ.¹)

Keywords:AlN,AlGaN