The 75th JSAP Autumn Meeting, 2014

Presentation information

Poster presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[19p-PB6-1~26] 15.4 III-V-group nitride crystals

Fri. Sep 19, 2014 4:00 PM - 6:00 PM PB6 (Gymnasium2)

ポスター掲示時間16:00~18:00(PB6会場)

4:00 PM - 6:00 PM

[19p-PB6-4] A Study of pretreatment process on selective area growth of GaN using SiN masks

Shin Man1, Rei Kayanuma1, Yusuke Takei1, Tokio Takahashi3, Toshihide Ide3, Mitsuaki Shimizu3, Kazuo Tsutsui1, Kuniyuki Kakushima1, Hitoshi Wakabayashi1, Yoshinori Kataoka2, Hiroshi Iwai2 (Tokyo Tech.1, JASRI2, AIST3)

Keywords:GaN,SiN,選択成長