[19p-PB6-1~26] 15.4 III-V-group nitride crystals

[19p-PB6-4] A Study of pretreatment process on selective area growth of GaN using SiN masks

^○Shin Man¹, Rei Kayanuma¹, Yusuke Takei¹, Tokio Takahashi³, Toshihide Ide³, Mitsuaki Shimizu³, Kazuo Tsutsui¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Yoshinori Kataoka², Hiroshi Iwai² (Tokyo Tech.¹, JASRI², AIST³)

Keywords:GaN,SiN,選択成長