Effect of characteristics of seed surface on the GaN growth using Ga<sub>2</sub>O vapor

Akira Kitamoto

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Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[17p-C5-1~18] 15.4 III-V-group nitride crystals

Wed. Sep 17, 2014 1:15 PM - 6:45 PM C5 (Open Hall)

3:30 PM - 3:45 PM

[17p-C5-8] Effect of characteristics of seed surface on the GaN growth using Ga₂O vapor

^○Akira Kitamoto¹, Yuan Bu¹, Hiroaki Takatsu¹, Masami Juta¹, Tomoaki Sumi¹, Mamoru Imade¹, Masashi Yoshimura¹, Masashi Isemura², Yusuke Mori¹ (Osaka Univ.¹, Itochu Plastics Inc.²)

Keywords:GaN

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Presentation information

[17p-C5-1~18] 15.4 III-V-group nitride crystals

[17p-C5-8] Effect of characteristics of seed surface on the GaN growth using Ga2O vapor

[17p-C5-8] Effect of characteristics of seed surface on the GaN growth using Ga₂O vapor