[17p-C5-1~18] 15.4 III-V-group nitride crystals

[17p-C5-7] Effect of temperature distribution on epitaxial GaN growth using Ga2O vapor

^○Hiroaki Takatsu¹, Yuki Taniyama¹, Masami Juta¹, Tomoaki Sumi¹, Akira Kitamoto¹, Mamoru Imade¹, Masashi Yoshimura¹, Masashi Isemura², Yusuke Mori¹ (Osaka University¹, Itochu Plastics Inc.²)

Keywords:GaN