The 75th JSAP Autumn Meeting, 2014

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Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[17p-C5-1~18] 15.4 III-V-group nitride crystals

Wed. Sep 17, 2014 1:15 PM - 6:45 PM C5 (Open Hall)

2:45 PM - 3:00 PM

[17p-C5-6] Comparison of crystalline qualities in semipolar {20-21} GaN and {20-2-1} GaN grown by hydride vapor phase epitaxy

○Yasuhiro Hashimoto1, Takashi Inagaki1, Kota Nakao1, Keisuke Yamane2, Narihito Okada1, Kazuyuki Tadatomo1 (Yamaguchi Univ.1, Toyohashi Univ. Tech.2)

Keywords:半極性GaN,20-21 and 20-2-1,HVPE