[18p-C5-1~19] 15.4 III-V-group nitride crystals

[18p-C5-1] [JSAP Paper Award Speech]（30min.）
Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

^○Toru Kinoshita^1,2, Toshiyuki Obata¹, Toru Nagashima¹, Hiroyuki Yanagi¹, Baxter Moody³, Seiji Mita³, Shin-ichiro Inoue^2,4, Yoshinao Kumagai⁵, Akinori Koukitu⁵, Zlatko Sitar^3,6 (Tokuyama¹, Kobe University², HexaTech³, NICT⁴, Tokyo University of Agriculture and Technology⁵, North Carolina State University⁶)