Microscale evaluation of SiC layer by carbonization of Si surface using CO gas

Presentation information

Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

Thu. Sep 18, 2014 8:30 AM - 12:30 PM C5 (Open Hall)

10:45 AM - 11:00 AM

^○Momoko Deura¹, Yutaka Ohno¹, Hiroyuki Fukuyama², Ichiro Yonenaga¹ (IMR, Tohoku Univ.¹, IMRAM, Tohoku Univ.²)

Keywords:Si基板上SiC,Si表面炭化,TEM観察