The 75th JSAP Autumn Meeting, 2014

Presentation information

Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[17p-C5-1~18] 15.4 III-V-group nitride crystals

Wed. Sep 17, 2014 1:15 PM - 6:45 PM C5 (Open Hall)

3:30 PM - 3:45 PM

[17p-C5-8] Effect of characteristics of seed surface on the GaN growth using Ga2O vapor

Akira Kitamoto1, Yuan Bu1, Hiroaki Takatsu1, Masami Juta1, Tomoaki Sumi1, Mamoru Imade1, Masashi Yoshimura1, Masashi Isemura2, Yusuke Mori1 (Osaka Univ.1, Itochu Plastics Inc.2)

Keywords:GaN