[17p-PB3-1~48] Poster
10.1 Creation of new materials
10.2 Spin torque, spin current, circuits, and measurement technologies
10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies
10.4 Semiconductors, organic, optical, and quantum spintronics

▲ [17p-PB3-35] Annealing temperature dependence of properties of magnetic tunnel junction with perpendicular easy axis using MgO/CoFeB/Ta/CoFeB/MgO recording structure

^〇(P)Eli Enobio^1,2, Hideo Sato^2,3, Shunsuke Fukami^2,3, Shoji Ikeda^1,2,3, Fumihiro Matsukura^4,1,2, Hideo Ohno^1,2,3,4 (Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku Univ.¹, CSIS, Tohoku Univ.², CIES, Tohoku Univ.³, WPI AIMR, Tohoku Univ.⁴)

Keywords:magnetic tunnel junction,tunnel magnetoresistance,perpendicular anisotropy