[17p-PB3-1~48] Poster
10.1 Creation of new materials
10.2 Spin torque, spin current, circuits, and measurement technologies
10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies
10.4 Semiconductors, organic, optical, and quantum spintronics

[17p-PB3-36] Dependences of magnetic characteristics on thickness of MgO capping layer in magnetic tunnel junctions of CoFeB sensing layer for sensor applications

^○Yosuke Tsuzaki¹, Takashi Takenaga¹, Taisuke Furukawa¹, Chikako Yoshida¹, Yuichi Yamazaki¹, Masaki Aoki¹, Yoshihisa Iba¹, Atsushi Takahashi¹, Koji Tsunoda¹, Masaaki Nakabayashi¹, Hideyuki Noshiro¹, Akiyoshi Hatada¹, Yukihisa Yoshida¹, Tetsuya Satake¹, Toshihiro Sugii¹ (LEAP¹)

Keywords:磁気トンネル接合,磁気センサー,MgOキャップ層