[18a-A17-1~13] 15.6 IV-group-based compounds

▲ [18a-A17-3] Evaluation of stacking faults in 4H-SiC single crystal by using KOH etching on non-polar {1-100} face and cathodoluminescence

^○Yongzhao Yao¹, Yukari Ishikawa¹, Yoshihiro Sugawara¹, Koji Sato¹, Takayuki Shirai², Katsunori Danno², Hidemitsu Sakamoto², Kazuaki Sato², Takeshi Bessho², Benjamin Dierre³, Kentaro Watanabe³, Takashi Sekiguchi³ (JFCC¹, Toyota Motor Corporation², NIMS³)

Keywords:炭化珪素,積層欠陥,KOHエッチング