[18a-A17-1~13] 15.6 IV-group-based compounds

[18a-A17-7] Characterization of stacking faults in 4H-SiC epilayers by X-ray topography

^○Kengo Noami¹, Tetsuya Nagai¹, Katsuhiko Nakai¹, Toshiro Futagi¹ (NSST¹)

Keywords:SiC,積層欠陥,X線トポグラフ