[18a-A19-1~13] 13.3 Si Process・Interconnect・MEMS・Integration

[18a-A19-5] Schottky barrier height of Sn/Ge contacts for various substrate orientations

^○Akihiro Suzuki¹, Yunsheng Deng¹, Masashi Kurosawa^1,2, Mitsuo Sakashita¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Graduate School of Eng, Nagoya Univ.¹, JSPS Research Fellow²)

Keywords:Sn/Geコンタクト,ショットキー障壁高さ,Ge面方位