[18a-A19-1~13] 13.3 Si Process・Interconnect・MEMS・Integration

Thu. Sep 18, 2014 9:00 AM - 12:30 PM A19 (E311)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[18a-A19-1] Boron activation in B₁₀H₁₄ implanted silicon by soft x-ray irradiation

^○Akira Heya¹, Shota Hirano¹, Fumito Kusakabe¹, Naoto Matsuo¹, Kazuhiro Kanda² (Univ. of Hyogo¹, LASTI, Univ. of Hyogo²)

9:15 AM - 9:30 AM

[18a-A19-2] \delta doping of Bi in Si crystal with use of Bi nanoline as a dopant source: Elucidation of doping mechanism by using EXAFS

K. Murata^1,2, K. Nitta³, T. Uruga³, Y. Terada³, K. Nittoh¹, O. Sakata¹, ^○K. Miki^1,2 (NIMS¹, Univ. of Tsukuba², JASRI³)

9:30 AM - 9:45 AM

[18a-A19-3] Delta doping of Bi in Si crystal with use of Bi nanoline as a dopant source: Reconsideration of anneal temperature

^○(M2)Takashi Kanazawa^1,2, Koichi Murata^1,2, Kohichi Nitto¹, Kazushi Miki^1,2 (NIMS¹, Univ. Tsukuba²)

9:45 AM - 10:00 AM

[18a-A19-4] Low-temperature formation of Ge diodes fabricated by laser doping in phosphoric acid

^○Kouta Takahashi¹, Masashi Kurosawa^1,2, Hiroshi Ikenoue³, Mitsuo Sakashita¹, Wakana Takeuchi¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Nagoya Univ.¹, JSPS², Kyushu Univ.³)

10:00 AM - 10:15 AM

[18a-A19-5] Schottky barrier height of Sn/Ge contacts for various substrate orientations

^○Akihiro Suzuki¹, Yunsheng Deng¹, Masashi Kurosawa^1,2, Mitsuo Sakashita¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Graduate School of Eng, Nagoya Univ.¹, JSPS Research Fellow²)

10:15 AM - 10:30 AM

[18a-A19-6] Bonding states and Fermi-level depinning of WSin/Ge junctions

^○Noriyuki Uchida¹, Naoya Okada^1,2, Takehide Miyazaki³, Kouichi Fukuda¹, Kanayama Toshihiko⁴ (NeRI-AIST¹, JST-PREST², NRI-AIST³, AIST⁴)

Break 10:30～10:45 (10:30 AM - 10:45 AM)

10:45 AM - 11:00 AM

[18a-A19-7] Cu bump formation on Al electrodes with electroless neutral Cu plating

^○Osamu Sugiura¹ (Chiba Inst. of Tech.¹)

11:00 AM - 11:15 AM

[18a-A19-8] Electrical properties of epitaxial Si-rich silicide films composed of W-encapsulating Si clusters

^○Naoya Okada^1,2, Noriyuki Uchida², Toshihiko Kanayama² (JST, PRESTO¹, AIST²)

11:15 AM - 11:30 AM

[18a-A19-9] Fabrication of VGA Size Near-Infrared Image Sensor Using Room-Temperature Bonding Technology

^○(DC)Takanori Shuto¹, Keiichiro Iwanabe¹, Mutsuo Ogura², Katsuhiko Nishida², Tanemasa Asano¹ (Kyushu Univ.¹, IRspec²)

11:30 AM - 11:45 AM

[18a-A19-10] Investigation on Room temperature Bonding Mechanism of Compliant Bump with Ultrasonic Assist

^○Keiichiro Iwanabe¹, Takanori Shuto¹, Ryo Takigawa¹, Tanemasa Asano¹ (Kyushu Univ.¹)

11:45 AM - 12:00 PM

[18a-A19-11] Low-Pressure CoC Bonding at Room Temperature by Miniaturization of Compliant Bump

^○Yohei Aoki¹, Ryo Takigawa¹, Keiichiro Iwanabe¹, Takanori Shuto¹, Tanemasa Asano¹ (Kyushu Univ.¹)

12:00 PM - 12:15 PM

[18a-A19-12] Investigation of area occupied by voids formed on wafer bonded InP/SiO2 interface

^○Keiichi Matsumoto¹, Yoshinori Kanaya¹, Junya Kishikawa¹, Kazuhiko Shimomura¹ (Sophia Univ.¹)

12:15 PM - 12:30 PM

[18a-A19-13] Fabrication of Pixel Circuits for 3D-Structured CMOS Image Sensors

^○Masahide Goto¹, Kei Hagiwara¹, Yoshinori Iguchi¹, Hiroshi Ohtake¹, Takuya Saraya², Eiji Higurashi², Hiroshi Toshiyoshi², Toshiro Hiramoto² (NHK STRL¹, Univ. of Tokyo²)

Session information

[18a-A19-1~13] 13.3 Si Process・Interconnect・MEMS・Integration