[18a-A20-1~11] 15.3 III-V-group epitaxial crystals

[18a-A20-8] Fabrication and characterization of InSb HEMT structures using graded buffer layer

^○Tatsuya Taketsuru¹, Takaomi Maeda¹, Daisuke Tsuji¹, Sachie Fujikawa¹, Hiroki Fujishiro¹ (Tokyo Univ. of Science¹)

Keywords:InSb,HEMT