Oral presentation

[18a-A20-1~11] 15.3 III-V-group epitaxial crystals

Thu. Sep 18, 2014 9:00 AM - 12:00 PM A20 (E312)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[18a-A20-1] [Young Scientist Oral Presentation Award Speech]（15min.）
High-temperature tolerance of InGaAsP MQW film directly bonded to Si substrate

^○Takuro Fujii¹, Tomonari Sato¹, Koji Takeda¹, Koichi Hasebe¹, Takaaki Kakitsuka¹, Shinji Matsuo¹ (NTT Photonics Labs.¹)

9:15 AM - 9:30 AM

[18a-A20-2] Localization of Sulfur Dopant in InGaAs Microdisks on Si

^○Tohma Watanabe¹, Miyuki Takeuchi², Yoshiaki Nakano¹, Masakazu Sugiyama¹ (Univ. Tokyo¹, Univ. Tokyo²)

9:30 AM - 9:45 AM

[18a-A20-3] Absorption properties of InGaAsN/GaAsSb quantum wells grown on InP substrates

Shigetoshi Shirafuji¹, Kouhei MIura², Yasuhiro Iguchi², ^○Yuichi Kawamura¹ (Osaka Prefecture Univ.¹, Sumitomo Electric Industries, Ltd.²)

9:45 AM - 10:00 AM

△ [18a-A20-4] High quality InAs/GaSb superlattices grown by metalorganic chemical vapor deposition

^○Suguru Arikata¹, Takashi Kyono¹, Kei Fujii¹, Kohei Miura², Katsushi Akita¹ (Sumitomo Electric Industries, Ltd.¹, Sumitomo Electric Industries, Ltd.²)

10:00 AM - 10:15 AM

[18a-A20-5] Observation of mid-infrared intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells

^○Teruhisa Kotani^1,2,3, Munetaka Arita¹, Yasuhiko Arakawa^1,2 (Nano Quine¹, IIS Univ. of Tokyo², SHARP³)

10:15 AM - 10:30 AM

[18a-A20-6] Evaluation of arsenic source shutter performance on MBE

^○Takeo Kageyama¹, Katuyuki Watanabe², Masahiro Kakuda¹, Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 (NanoQuine, Univ. of Tokyo¹, IIS, Univ. of Tokyo²)

Break 10:30～10:45 （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[18a-A20-7] Annealing effect on crystal structure of low-temperature-grown In_xGa_1-xAs

^○Yoriko Tominaga¹, Yuki Tomiyasu¹, Yutaka Kadoya¹ (AdSM, Hiroshima Univ.¹)

11:00 AM - 11:15 AM

[18a-A20-8] Fabrication and characterization of InSb HEMT structures using graded buffer layer

^○Tatsuya Taketsuru¹, Takaomi Maeda¹, Daisuke Tsuji¹, Sachie Fujikawa¹, Hiroki Fujishiro¹ (Tokyo Univ. of Science¹)

11:15 AM - 11:30 AM

[18a-A20-9] Direct visualization of N impurity state in GaAs using STM

^○Nobuyuki Ishida¹, Masafumi Jo², Takaaki Mano¹, Takeshi Noda¹, Yoshiki Sakuma¹, Daisuke Fujita¹ (NIMS¹, RIKEN²)

11:30 AM - 11:45 AM

[18a-A20-10] Electronic states of epitaxial two-dimensional nitrogen atomic sheet in GaAs (II)

^○Yukihiro Harada¹, Takeshi Baba¹, Toshiyuki Kaizu¹, Takashi Kita¹ (Kobe Univ.¹)

11:45 AM - 12:00 PM

[18a-A20-11] Photoluminescence dynamics in epitaxial two dimensional nitrogen atomic sheet in GaAs

^○Takeshi Baba¹, Yukihiro Harada¹, Toshiyuki Kaizu¹, Takashi Kita¹ (Grad. Sch. of Eng., Kobe Univ.¹)

Oral presentation

[18p-A20-7~21] 15.3 III-V-group epitaxial crystals

Thu. Sep 18, 2014 3:00 PM - 7:00 PM A20 (E312)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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3:00 PM - 3:15 PM

[18p-A20-7] Formation Mechanism of Buried GaAs/AlGaAs Core-shell Nanowires Studied by X-ray Diffraction

^○Go Yoshida¹, Satoshi Shimomura¹, Fumitaro Ishikawa¹ (Ehime Univ.¹)

3:15 PM - 3:30 PM

[18p-A20-8] Formation of Ga droplets on GaAs{111}A,B surfaces

^○Akihiro Ohtake¹, Takaaki Mano¹, Neul Ha^1,2 (NIMS¹, Kyushu Univ.²)

3:30 PM - 3:45 PM

[18p-A20-9] Behavior of Ga atoms deposited on GaAs (111)B surface

^○Atsushi Kawaharazuka^1,2,3, Yoshiji Horikoshi^1,2,3 (ZAIKEN¹, Waseda Univ.², JST-CREST³)

3:45 PM - 4:00 PM

△ [18p-A20-10] Volume distribution in islands growth with 2 kinds of diffusion atoms

^○(M2)Ryo Yamauchi¹, Xiangmeng Lu¹, Masataka Koyama¹, Hirotaka Sasakura^1,2, Shunichi Muto¹ (Hokkaido Univ.¹, CRIS²)

4:00 PM - 4:15 PM

△ [18p-A20-11] Growth of InAs S-K Quantum Dots on GaAs Nanowires on Silicon (100) Substrates

^○(D)Jinkwan Kwoen¹, Katsuyuki Watanabe¹, Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 (IIS, Univ. of Tokyo¹, NanoQuine, Univ. of Tokyo²)

4:15 PM - 4:30 PM

[18p-A20-12] Fabrication of micro-pillar cavity with low-density InAs quantum dots and their PL properties

^○Hiroyuki Yamashita¹, Yuta Takahashi¹, Koichi Yamaguchi¹ (Univ. of Electro-Communication¹)

4:30 PM - 4:45 PM

[18p-A20-13] Anisotropy of in-plane photoconductivity in stacked InAs/InGaAs quantum dots structure

^○Keisuke Murakumo¹, Naoto Kumagai¹, Takahiro Kitada¹, Toshiro Isu¹ (Tokushima Univ.¹)

Break 16:45～17:00 （4:45 PM - 5:00 PM）

5:00 PM - 5:15 PM

▲ [18p-A20-14] Formation of InAs quantum dots emitting at 1.55 micron using droplet epitaxy on metamorphic InAlAs/InAs/GaAs(111)A

^〇Neul Ha^1,2, Takaaki Mano¹, Xiangming Liu¹, Takashi Kuroda^1,2, Lazutaka Mitsuishi¹, Akihiro Ohtake¹, Takeshi Noda¹, Yoshiki Sakuma¹, Kazuaki Sakoda¹ (National Institute for Materials Science (NIMS)¹, Kyushu University²)

5:15 PM - 5:30 PM

[18p-A20-15] Tuning the emission wavelength of InAs quantum dots on GaAs(001) to over 1.55 μm

^○Kenichi Shimomura¹, Itaru Kamiya¹ (Toyota Tech. Inst.¹)

5:30 PM - 5:45 PM

[18p-A20-16] Influence of InGaAs layer on photoluminescence of InAs quantum dots with AlAs cap

^○Xiangmeng Lu¹, Akihiro Kawaguchi¹, Yosinori Nakagawa^1,2, Naoto Kumagai¹, Takahiro Kitada¹, Toshiro Isu¹ (Univ. Of Tokushima¹, NICHIA Corporation²)

5:45 PM - 6:00 PM

[18p-A20-17] Mechanism of the emission wavelength shift of InAs quantum dots on nitrogen δ-doped GaAs

^○Toshiyuki Kaizu^1,2, Takashi Kita² (CSREA, Kobe Univ¹, Grad. Sch. of Eng., Kobe Univ.²)

6:00 PM - 6:15 PM

[18p-A20-18] Behavior of the energy levels of InAs/InGaAsP quantum dots structure

Hajime Imai¹, ^○(M2)Moeka Yamaguchi¹, Nobuko Arai¹, Yume Ide¹ (Japan Women's Univ.¹)

6:15 PM - 6:30 PM

[18p-A20-19] Introduction of a GaP(As) layer into 1.3-μm InAs/GaAs quantum-dot structures

^○Katsuyuki Watanabe¹, Takeo Kageyama², Masahiro Kakuda², Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 (IIS, Univ. of Tokyo¹, NanoQuine, Univ. of Tokyo²)

6:30 PM - 6:45 PM

[18p-A20-20] Growth of high-temperature-partially-capped InAs/GaAs single quantum dots with As₂ source

^○(P)Masahiro Kakuda¹, Jinkwan Kwoen², Yasutomo Ota¹, Katsuyuki Watanabe², Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 (The Univ. of Tokyo¹, The Univ. of Tokyo²)

6:45 PM - 7:00 PM

[18p-A20-21] InAs quantum dot structure grown by digital embedding method on InP(311)B substrate

^○Kouichi Akahane¹, Naokatsu Yamamoto¹, Tetsuya Kawanishi¹ (NICT¹)

Poster presentation

[19p-PB5-1~16] 15.3 III-V-group epitaxial crystals

Fri. Sep 19, 2014 4:00 PM - 6:00 PM PB5 (Gymnasium2)

ポスター掲示時間16:00～18:00(PB5会場)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:00 PM - 6:00 PM

▲ [19p-PB5-1] Formation and control of wetting layer during the growth of InAs quantum dots on InP(111)A by droplet epitaxy

^〇Neul Ha^1,2, Xiangming Liu¹, Takaaki Mano¹, Takashi Kuroda^1,2, Akihiro Ohtake¹, Kazutaka Mitsuishi¹, Takeshi Noda¹, Yoshiki Sakuma¹, Kazuaki Sakoda¹ (National Institute for Materials Science (NIMS)¹, Kyushu University²)

4:00 PM - 6:00 PM

[19p-PB5-2] Specific PL properties of in-plane ultrahigh-density InAs-QD layer

^○Syunsuke Uchida¹, Koichi Yamaguchi¹ (Univ. of Electro-Communication¹)

4:00 PM - 6:00 PM

[19p-PB5-3] Effect of surface roughness on density of self-assembled quantum dot grown by MBE

^○Osamu Muramatsu¹, Masataka Koyama¹, Sasakura Hirotaka^1,2, Shunichi Muto¹, Yoshiaki Nakata¹ (Hokkaido Univ¹, CRIS²)

4:00 PM - 6:00 PM

[19p-PB5-4] Growth of GaSb and AlSb quantum dots on high index GaAs substrates

^○Takuya Kawazu¹, Takeshi Noda¹, Takaaki Mano¹, Yoshiki Sakuma¹, Hiroyuki Sakaki^1,2 (NIMS¹, Toyota Tech. Inst.²)

4:00 PM - 6:00 PM

[19p-PB5-5] Multiple stacking of self-organized InGaP/InGaP quantum wire-like structure

^○Manabu Mitsuhara¹, Noriyuki Watanabe¹, Haruki Yokoyama¹, Naoteru Shigekawa² (NTT Photonics Labs.¹, Osaka City Univ.²)

4:00 PM - 6:00 PM

[19p-PB5-6] Luminescence of AlGaAs/GaAs superlattice pin junction

^○Tomohiro Nakano¹, Hiroyuki Urabe¹, Makoto Kuramoto¹, Atsushi Kawaharazuka^1,2, Jiro Nishinaga³, Kouji Onomitsu⁴, Toshiki Makimoto¹, Yoshiji Horikoshi^1,2 (Waseda Univ¹, JST-CREST², AIST³, NTT-BRL⁴)

4:00 PM - 6:00 PM

[19p-PB5-7] Attempt to fabricate wurtzite AlGaP on GaN substrate by MOVPE

^○Yoshihiro Hiraya¹, Fumiya Ishizaka¹, Katsuhiro Tomioka^1,2, Takashi Fukui¹ (GS-IST and RCIQE, Hokkaido Univ.¹, JST-PRESTO²)

4:00 PM - 6:00 PM

[19p-PB5-8] Molecular beam epitaxy growth of GaAs thin films on calcium fluoride substrates

^○tatsuya murakami¹, masashi akabori¹, hiuma iwase¹, shirou hidaka¹, syoji yamada¹, rutt harvey² (JAIST¹, Univ. of Southampton²)

4:00 PM - 6:00 PM

[19p-PB5-9] Epitaxial regrowth of GaAs layer on crystalline AlOx thin films

^○(PC)Nozomi Nishizawa¹, Hiro Munekata¹ (Imaging Sci. & Eng. Lab., Tokyo Inst. of Tech.¹)

4:00 PM - 6:00 PM

[19p-PB5-10] Electrical characteristics influenced by interfacial voids of directly-bonded InP/Si substrate

^○Yoshinori Kanaya¹, Keiichi Matsumoto¹, Junya Kishikawa¹, Kazuhiko Shimomura¹ (Sophia Univ.¹)

4:00 PM - 6:00 PM

[19p-PB5-11] Epitaxial growth of GaSb on Si(111) substrate and Estimate of film quality

^○Hiroya Shimoyama¹, Masayuki Mori¹, Koichi Maezawa¹ (Graduate school of Sci. and Eng., Univ. of Toyama¹)

4:00 PM - 6:00 PM

[19p-PB5-12] Epitaxial growth of InSb thin films on a Ge(111) substrate

^○Takaaki Mitsueda¹, Masayuki Mori¹, Koichi Maezawa¹ (Graduate School of Science and Engineering, Univ. of Toyama¹)

4:00 PM - 6:00 PM

[19p-PB5-13] Ge/GaAs direct MOVPE growth on silicon using metal organic germanium precursor

^○Masakazu Arai¹, Ryo Nakao¹, Masaki Kohtoku¹ (NTT Photonics Lab.¹)

4:00 PM - 6:00 PM

[19p-PB5-14] GaSb heteroepitaxy on Si(111) and fabrication of HfO₂/GaSb MOS capacitors

^○Akihiro Ohtake¹, Noriyuki Miyata², Takaaki Mano¹, Takahiro Mori², Tetsuji Yasuda² (NIMS¹, AIST²)

4:00 PM - 6:00 PM

[19p-PB5-15] Heteroepitaxial Growth of InSb Thin Films on a Silicon-on-Insulator Substrate

^○Taichi Sakamoto¹, Masayuki Mori², Koichi Maezawa³ (Univ, of Toyama¹, Univ, of Toyama², Univ, of Toyama³)

4:00 PM - 6:00 PM

[19p-PB5-16] Research on cross-sectional geometry of InP-based waveguide grown on InP/Glass using selective MOVPE

^○(M1)Junya Kishikawa¹, Keiichi Matsumoto¹, Yoshinori Kanaya¹, Kazuhiko Shimomura¹ (Sophia Univ.¹)

Sessions

15. Crystal Engineering » 15.3 III-V-group epitaxial crystals

[18a-A20-1~11] 15.3 III-V-group epitaxial crystals

△ [18a-A20-4] High quality InAs/GaSb superlattices grown by metalorganic chemical vapor deposition

[18p-A20-7~21] 15.3 III-V-group epitaxial crystals

△ [18p-A20-10] Volume distribution in islands growth with 2 kinds of diffusion atoms

△ [18p-A20-11] Growth of InAs S-K Quantum Dots on GaAs Nanowires on Silicon (100) Substrates

▲ [18p-A20-14] Formation of InAs quantum dots emitting at 1.55 micron using droplet epitaxy on metamorphic InAlAs/InAs/GaAs(111)A

[19p-PB5-1~16] 15.3 III-V-group epitaxial crystals

▲ [19p-PB5-1] Formation and control of wetting layer during the growth of InAs quantum dots on InP(111)A by droplet epitaxy