[19p-PB5-1~16] 15.3 III-V-group epitaxial crystals

▲ [19p-PB5-1] Formation and control of wetting layer during the growth of InAs quantum dots on InP(111)A by droplet epitaxy

^〇Neul Ha^1,2, Xiangming Liu¹, Takaaki Mano¹, Takashi Kuroda^1,2, Akihiro Ohtake¹, Kazutaka Mitsuishi¹, Takeshi Noda¹, Yoshiki Sakuma¹, Kazuaki Sakoda¹ (National Institute for Materials Science (NIMS)¹, Kyushu University²)

Keywords:InAs quantum dots,Droplet epitaxy