[18p-A20-7~21] 15.3 III-V-group epitaxial crystals

[18p-A20-19] Introduction of a GaP(As) layer into 1.3-μm InAs/GaAs quantum-dot structures

^○Katsuyuki Watanabe¹, Takeo Kageyama², Masahiro Kakuda², Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 (IIS, Univ. of Tokyo¹, NanoQuine, Univ. of Tokyo²)

Keywords:量子ドット,砒化インジウム,分子線エピタキシー