The 75th JSAP Autumn Meeting, 2014

Presentation information

Oral presentation

15. Crystal Engineering » 15.3 III-V-group epitaxial crystals

[18p-A20-7~21] 15.3 III-V-group epitaxial crystals

Thu. Sep 18, 2014 3:00 PM - 7:00 PM A20 (E312)

5:00 PM - 5:15 PM

[18p-A20-14] Formation of InAs quantum dots emitting at 1.55 micron using droplet epitaxy on metamorphic InAlAs/InAs/GaAs(111)A

Neul Ha1,2, Takaaki Mano1, Xiangming Liu1, Takashi Kuroda1,2, Lazutaka Mitsuishi1, Akihiro Ohtake1, Takeshi Noda1, Yoshiki Sakuma1, Kazuaki Sakoda1 (National Institute for Materials Science (NIMS)1, Kyushu University2)

Keywords:InAs quantum dots,droplet epitaxy