The 75th JSAP Autumn Meeting, 2014

Presentation information

Print

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[18a-A22-1~12] 14.3 Electron devices and Process technology

Thu. Sep 18, 2014 9:00 AM - 12:15 PM A22 (E314)

9:00 AM - 9:15 AM

[18a-A22-1] Investigation of reactivation mechanism of Si donors deactivated by plasma-induced defects in n-GaN

○Hiroki Yokoyama1, Seiji Nakamura1, Tsugunori Okumura1 (Tokyo Metropolitan Univ.1)

Keywords:GaN,欠陥,plasma